IRF740APBF Vishay, IRF740APBF Datasheet - Page 4

N CHANNEL MOSFET, 400V, 10A, TO-220

IRF740APBF

Manufacturer Part Number
IRF740APBF
Description
N CHANNEL MOSFET, 400V, 10A, TO-220
Manufacturer
Vishay
Datasheets

Specifications of IRF740APBF

Transistor Polarity
N Channel
Continuous Drain Current Id
10A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
550mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
550 mOhm @ 6A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
10A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
36nC @ 10V
Input Capacitance (ciss) @ Vds
1030pF @ 25V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
0.55 Ohm @ 10 V
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
10 A
Power Dissipation
125000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Fall Time
22 ns
Rise Time
35 ns
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF740APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IRF740APBF
Quantity:
70 000
Document Number: 91051
100000
10000
1000
100
10
100
1
0.1
10
1
Fig 5. Typical Capacitance Vs.
1
Fig 7. Typical Source-Drain Diode
0.2
Drain-to-Source Voltage
T = 150 C
V DS , Drain-to-Source Voltage (V)
J
V
0.4
SD
Forward Voltage
,Source-to-Drain Voltage (V)
V GS = 0V,
C iss = C gs + C gd , C ds
C rss = C gd
C oss = C ds + C gd
°
10
0.6
Crss
Ciss
Coss
0.8
T = 25 C
f = 1 MHZ
J
100
1.0
°
SHORTED
V
GS
1.2
= 0 V
1000
1.4
100
20
16
12
Fig 8. Maximum Safe Operating Area
10
8
4
0
1
10
0
Fig 6. Typical Gate Charge Vs.
I =
T
T
Single Pulse
D
C
J
= 25 C
= 150 C
10A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
°
Q , Total Gate Charge (nC)
°
G
10
, Drain-to-Source Voltage (V)
BY R
V
V
V
DS
DS
DS
100
20
DS(on)
= 320V
= 200V
= 80V
FOR TEST CIRCUIT
SEE FIGURE
www.vishay.com
30
10us
100us
1ms
10ms
13
1000
40
4

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