IRF730APBF Vishay, IRF730APBF Datasheet

N CHANNEL MOSFET, 400V, 5.5A TO-220

IRF730APBF

Manufacturer Part Number
IRF730APBF
Description
N CHANNEL MOSFET, 400V, 5.5A TO-220
Manufacturer
Vishay
Datasheets

Specifications of IRF730APBF

Transistor Polarity
N Channel
Continuous Drain Current Id
5.5A
Drain Source Voltage Vds
400V
On Resistance Rds(on)
1ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
4.5V
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
1 Ohm @ 3.3A, 10V
Drain To Source Voltage (vdss)
400V
Current - Continuous Drain (id) @ 25° C
5.5A
Vgs(th) (max) @ Id
4.5V @ 250µA
Gate Charge (qg) @ Vgs
22nC @ 10V
Input Capacitance (ciss) @ Vds
600pF @ 25V
Power - Max
74W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Gate Charge Qg
22 nC
Minimum Operating Temperature
- 55 C
Configuration
Single
Resistance Drain-source Rds (on)
1 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
3.1 S
Drain-source Breakdown Voltage
400 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
5.5 A
Power Dissipation
74000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
*IRF730APBF

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRF730APBF
Manufacturer:
VISHAY
Quantity:
20 000
Part Number:
IRF730APBF
Manufacturer:
VISHAY/威世
Quantity:
20 000
Company:
Part Number:
IRF730APBF
Quantity:
70 000
l
l
l
l
l
l
l
l
Document Number: 91045
l
l
I
I
I
P
V
dv/dt
T
T
D
D
DM
STG
D
GS
J
@ T
@ T
Avalanche Voltage and Current
dv/dt Ruggedness
@T
Switch Mode Power Supply (SMPS)
Uninterruptable Power Supply
High speed power switching
Lead-Free
Low Gate Charge Qg results in Simple
Improved Gate, Avalanche and dynamic
Fully Characterized Capacitance and
Effective Coss Specified (See AN1001)
Single Transistor Forward Xfmr. Reset
Drive Requirement
Single Transistor Flyback Xfmr. Reset
C
C
C
= 25°C
= 100°C
= 25°C
(Both US Line input only).
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Parameter
SMPS MOSFET
GS
GS
@ 10V
@ 10V
V
400V
DSS
300 (1.6mm from case )
HEXFET
10 lbf•in (1.1N•m)
-55 to + 150
Rds(on) max
TO-220AB
Max.
± 30
5.5
3.5
0.6
4.6
22
74
1.0Ω
®
Power MOSFET
G
D
www.vishay.com
PD - 94976
S
Units
W/°C
5.5A
V/ns
°C
W
A
V
I
D
1

Related parts for IRF730APBF

IRF730APBF Summary of contents

Page 1

... US Line input only). Document Number: 91045 SMPS MOSFET HEXFET V Rds(on) max DSS 400V @ 10V GS @ 10V GS - 150 300 (1.6mm from case ) 10 lbf•in (1.1N• 94976 ® Power MOSFET I D 1.0Ω 5. TO-220AB Max. Units 5.5 3 0.6 W/°C ± 4.6 V/ns °C www.vishay.com 1 ...

Page 2

... Intrinsic turn-on time is negligible (turn-on is dominated by L Conditions = 250µ 1mA D = 3.3A „ 250µ 0V 125° Conditions = 3.3A D „ = 1.0V, ƒ = 1.0MHz DS = 320V, ƒ = 1.0MHz 320V … DS Max. Units 290 mJ 5.5 A 7.4 mJ Max. Units 1.70 ––– °C Conditions „ = 5.5A 3. www.vishay.com 2 ...

Page 3

... 2.0 1.5 1.0 0.5 = 50V 0.0 8.0 9.0 10.0 -60 -40 -20 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V 4.5V 20µs PULSE WIDTH ° 150 Drain-to-Source Voltage (V) DS 5.5 5. 10V 100 120 140 160 ° Junction Temperature ( C) J www.vishay.com 100 3 ...

Page 4

... 150 C J Single Pulse 0.1 10 1.0 1.2 5.9A 5 320V 200V 80V DS FOR TEST CIRCUIT SEE FIGURE Total Gate Charge (nC) G OPERATION IN THIS AREA LIMITED BY R DS(on) 10us 100us 1ms 10ms ° ° 100 V , Drain-to-Source Voltage (V) DS www.vishay.com 25 1000 4 ...

Page 5

... T , Case Temperature ( 0.50 0.20 0.10 0.05 0.1 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 Document Number: 91045 V DS 90% 125 150 ° 10 d(on) Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec ≤ 1 ≤ 0 d(off thJC C 0.1 1 www.vishay.com 5 ...

Page 6

... Fig 12c. Maximum Avalanche Energy 610 600 590 580 570 560 + 550 540 0.0 1.0 Fig 12d. Typical Drain-to-Source Voltage I D TOP 2.5A 3.5A BOTTOM 5. 100 125 ° J Vs. Drain Current 2.0 3.0 4.0 5 Avalanche Current ( A) Vs. Avalanche Current www.vishay.com 150 6.0 6 ...

Page 7

... Reverse Recovery Current D.U. Re-Applied Voltage Inductor Curent Document Number: 91045 + • • ƒ • - „ - • • • • P.W. Period D = Period Waveform Body Diode Forward Current di/dt Waveform Diode Recovery dv/dt Body Diode Forward Drop Ripple ≤ =10V www.vishay.com 7 ...

Page 8

... C while V is rising from 0 to 80% V oss DS , (BR)DSS Data and specifications subject to change without notice 1.32 (.052) 1.22 (.048 LEAD ASSIGNMENTS GATE 2 - DRAIN SOURCE DRAIN 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.104 DSS TAC Fax: (310) 252-7903 02/04 www.vishay.com 8 ...

Page 9

... Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. ...

Related keywords