IRF430 International Rectifier, IRF430 Datasheet - Page 2

• Manufacturer Part Number: IRF430
• Description: N CH MOSFET, 500V, 4.5A, TO-204AA
• Manufacturer: International Rectifier

Specifications of IRF430

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 4.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 1.5ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Thermal Resistance
R thJA
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
For footnotes refer to the last page
IRF430
R thJC
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
L S + L D
C iss
C oss
C rss
t f
I S
I SM
V SD
t rr
Q RR
t o n
BV DSS / T J
(off)
(on)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction to Case
Junction to Ambient
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
Min
500
2.0
2.7
2.0
8.0
—
—
—
—
—
—
—
1 6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.67
0.78
Typ Max Units
610
135
6.1
6 5
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
4.5
1.4
7.0
1 8
900
1.80
-100
°C/W
250
100
1.50
6.0
4.0
—
—
—
2 5
4 0
2 0
3 0
4 0
8 0
3 0
—
—
—
nS
µc
V
A
V/°C
S ( )
nH
nA
n s
nC
pF
V
V
A
Typical socket mount
T j = 25°C, I F =4.5A, di/dt 100A/ s
T
j
= 25°C, I S =4.5A, V GS = 0V
Measured from the center of
drain pad to center of source
p a d
Reference to 25°C, I D = 1.0mA
V GS =10V, I D =4.5A
V GS = 10V, I D =3.0A
V DS = V GS , I D =250µA
Test Conditions
Test Conditions
V DS > 15V, I DS =3.0A
V GS = 0V, I D = 1.0mA
V GS = 0V, T J = 125°C
V DD =250V, I D =4.5A,
V GS = 0V, V DS =25V
Test Conditions
V DS =400V, V GS =0V
V GS =10V, ID = 4.5A
V DD 50V
V DS =400V
V DS =250V
f = 1.0MHz
V GS =-20V
V GS =20V
R G =7.5
www.irf.com