IRF230 International Rectifier, IRF230 Datasheet - Page 2

• Manufacturer Part Number: IRF230
• Description: N CHANNEL MOSFET, 200V, 9A TO-204AA
• Manufacturer: International Rectifier

Specifications of IRF230

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 9A
• Drain Source Voltage Vds: 200V
• On Resistance Rds(on): 400mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Thermal Resistance
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
IRF230
R thJC
R thJA
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
L S + L D
C iss
C oss
C rss
t f
I S
I SM
V SD
t rr
Q RR
t o n
BV DSS / T J
(off)
(on)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction to Case
Junction to Ambient
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
Min
200
2.0
3.0
3.0
8.0
—
—
—
—
—
—
—
1 6
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.67
0.29
Typ Max Units
600
250
6.1
3 0
8 0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
500
9.0
1.4
6.0
3 6
-100
0.40
0.49
4.0
°C/W
250
100
5.7
—
—
—
2 5
3 9
2 0
3 5
8 0
6 0
4 0
—
—
—
nS
µc
V
A
V/°C
S ( )
nH
V
nA
n s
nC
pF
V
A
Typical socket mount
T j = 25°C, I F = 9.0A, di/dt 100A/ s
T
j
= 25°C, I S =9.0A, V GS = 0V
Measured from the center of
drain pad to center of source
p a d
Reference to 25°C, I D = 1.0mA
V DS = V GS , I D =250µA
V GS = 10V, I D =6.0A
V GS =10V, I D =9.0A
V DS > 15V, I DS =6.0A
Test Conditions
Test Conditions
V GS = 0V, I D = 1.0mA
V GS = 0V, T J = 125°C
V DD =100V, I D =9.0A,
V GS = 0V, V DS =25V
V GS =10V, ID = 9.0A
Test Conditions
V DS =160V, V GS =0V
V DD 50V
V DS =160V
V DS =100V
f = 1.0MHz
V GS =-20V
V GS =20V
R G =7.5
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