IRF130 International Rectifier, IRF130 Datasheet - Page 2

• Manufacturer Part Number: IRF130
• Description: N CH MOSFET, 100V, 14A, TO-204AA
• Manufacturer: International Rectifier

Specifications of IRF130

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 14A
• Drain Source Voltage Vds: 100V
• On Resistance Rds(on): 180mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Thermal Resistance
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
For footnotes refer to the last page
IRF130
R thJC
R thJA
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
L S + L D
C iss
C oss
C rss
t f
I S
I SM
V SD
t rr
Q RR
t o n
BV DSS / T J
(off)
(on)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction to Case
Junction to Ambient
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
Min
100
2.0
4.6
2.5
5.0
—
—
—
—
—
—
—
1 2
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1.67
0.13
Typ Max Units
650
250
6.1
4 4
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
300
1.5
3.0
1 4
5 6
-100
°C/W
0.18
0.21
4.0
250
100
—
—
—
2 5
3 5
1 0
1 5
3 5
8 0
6 0
4 5
—
—
—
nS
µC
V
A
S ( )
V/°C
nH
V
nA
n s
nC
pF
V
A
Typical socket mount
T j = 25°C, I F = 14A, di/dt
T
j
= 25°C, I S = 14A, V GS = 0V
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Reference to 25°C, I D = 1.0mA
V DS = V GS , I D =250µA
V GS = 10V, I D =14A
V DS > 15V, I DS = 9.0A
Test Conditions
Test Conditions
V GS = 10V, I D = 9.0A
V GS = 0V, I D = 1.0mA
V GS = 0V, T J = 125°C
V GS = 0V, V DS = 25V
Test Conditions
V DD =50V, I D =14A,
V DD
V GS =10V, ID = 14A
V DS =80V, V GS =0V
V GS = -20V
f = 1.0MHz
V DS = 80V
V DS = 50V
V GS = 20V
R G =7.5
50V
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100A/ s