SI4933DY-T1-GE3 Vishay, SI4933DY-T1-GE3 Datasheet - Page 5
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SI4933DY-T1-GE3
Manufacturer Part Number
SI4933DY-T1-GE3
Description
DUAL P CH MOSFET
Manufacturer
Vishay
Datasheet
1.SI4933DY-T1-GE3.pdf
(6 pages)
Specifications of SI4933DY-T1-GE3
Module Configuration
Dual
Transistor Polarity
P Channel
Continuous Drain Current Id
-7.4A
Drain Source Voltage Vds
-12V
On Resistance Rds(on)
11.5mohm
Rds(on) Test Voltage Vgs
-4.5V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?71980.
Document Number: 71980
S09-0867-Rev. D, 18-May-09
0.01
0.1
2
1
10
-4
Single Pulse
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
10
-3
Normalized Thermal Transient Impedance, Junction-to-Foot
Square Wave Pulse Duration (s)
10
-2
10
-1
1
Vishay Siliconix
Si4933DY
www.vishay.com
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