SI4900DY-T1-GE3 Vishay, SI4900DY-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SI4900DY-T1-GE3
• Description: DUAL N CHANNEL MOSFET, 60V, 5.3A
• Manufacturer: Vishay

Specifications of SI4900DY-T1-GE3

• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5.3A
• Drain Source Voltage Vds: 60V
• On Resistance Rds(on): 72mohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 3V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 73272
S09-0540-Rev. E, 06-Apr-09
0.080
0.075
0.070
0.065
0.060
0.055
0.050
0.045
0.040
20
18
16
14
12
10
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
8
6
4
2
0
0.0
0
0
V
0.2
GS
2
V
I
D
DS
= 10 V thru 4 V
= 4.3 A
0.4
= 30 V
3
4
V
V
DS
GS
Output Characteristics
Q
0.6
- Drain-to-Source Voltage (V)
= 4.5 V
6
g
I
- Total Gate Charge (nC)
D
Gate Charge
- Drain Current (A)
0.8
6
8
1.0
10
3 V
1.2
12
9
V
1.4
14
GS
= 10 V
1.6
12
16
1.8
18
2.0
15
20
1000
800
600
400
200
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
5
4
3
2
1
0
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
V
I
D
0.5
GS
10
= 4.3 A
= 10 V
V
C
V
DS
0
Transfer Characteristics
GS
oss
T
1.0
J
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
- Gate-to-Source Voltage (V)
20
25
Capacitance
1.5
50
30
Vishay Siliconix
2.0
T
C
C
iss
25 °C
75
= 125 °C
40
Si4900DY
2.5
100
www.vishay.com
50
3.0
125
- 55 °C
150
3.5
60
3