U421 Vishay, U421 Datasheet

Transistor

U421

Manufacturer Part Number
U421
Description
Transistor
Manufacturer
Vishay
Datasheet

Specifications of U421

Breakdown Voltage Vbr
-40V
Gate-source Cutoff Voltage Vgs(off) Max
-2V
Power Dissipation Pd
500mW
Continuous Drain Current Id
1mA
Gate-source Breakdown Voltage
-40V
Mounting Type
Through Hole
Current Rating
10mA
Gate-source Cutoff Voltage
-2V
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
U421
Manufacturer:
VISHAY10
Quantity:
487
DESCRIPTION
The U421/423 are monolithic dual n-channel JFETs designed
to provide very high input impedance for differential
amplification and impedance matching. Among its many
unique features, this series offers operating gate current
specified at - 250 fA.
ABSOLUTE MAXIMUM RATINGS
Gate-Drain, Gate-Source Voltage
Gate-Gate Voltage
Gate Current
Lead Temperature (
Storage Temperature
Operating Junction Temperature
Document Number: 70248
S-03180—Rev. D, 17-Feb-03
PRODUCT SUMMARY
FEATURES
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 0.2 pA
D Low Noise
D High CMRR: 102 dB
Part Number
U421
U423
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
/
16
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
” from case for 10 sec.)
GS(off)
-0.4 to -2
-0.4 to-2
. . . . . . . . . . . . . . . . . . . . . . . . . .
(V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Monolithic N-Channel JFET Duals
V
(BR)GSS
. . . . . . . . . . . . . . . . . .
BENEFITS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time Accuracy
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signals
-40
-40
Min (V)
D
1
G
-55 to 150_C
-65 to 200_C
1
S
1
2
g
fs
300 _C
"40 V
1
10 mA
3
-40 V
Min (mS)
0.3
0.3
Top View
TO-78
Case, Substrate
4
The hermetic TO-78 package is available with full military
processing (see Military Information).
For similar products see the low-noise U/SST401 series and
high-gain 2N5911/5912 data sheets.
Power Dissipation :
Notes
a.
b.
I
G
5
Derate 2.4 mW/_C above 25_C
Derate 4 mW/_C above 25_C
7
Max (pA) jV
-0.25
-0.25
6
G
S
2
2
D
2
GS1
- V
Per Side
Total
GS2
b
10
25
APPLICATIONS
D Ultralow Input Current
D High-Speed Comparators
D Impedance Converters
. . . . . . . . . . . . . . . . . . . . . . . . . . .
j Max (mV)
a
Differential Amps
. . . . . . . . . . . . . . . . . . . . . . . .
Vishay Siliconix
U421/423
www.vishay.com
300 mW
500 mW
7-1

Related parts for U421

U421 Summary of contents

Page 1

... D Low Gate Leakage: 0 Low Noise D High CMRR: 102 dB DESCRIPTION The U421/423 are monolithic dual n-channel JFETs designed to provide very high input impedance for differential amplification and impedance matching. Among its many unique features, this series offers operating gate current specified at - 250 fA. ...

Page 2

... DS 0 kHz = kHz 0 kHz = kHz 0.4 1 MHz -55 to 125_C 102 DG D Limits U421 U423 Unit a Min Max Min Max -40 -40 "40 "40 V -0 1000 60 1000 - -0.25 -0. -250 -250 W -1.8 -1.8 V 0.3 1.5 0.3 1 0.12 0.35 0.12 0. 1.5 1.5 nV⁄ √ ...

Page 3

... -0.1 V 0.6 -0.2 V -0.3 V 0.4 -0.4 V -0.5 V -0.6 V 0.2 -0 0.5 -0.1 V 0.4 -0.2 V 0.3 -0.3 V -0.4 V 0.2 -0.5 V 0.1 -0.6 V -0.7 V 0.8 1 U421/423 Vishay Siliconix Gate Leakage Current T = 125_C 100 25_C 25_C GSS Drain-Gate Voltage (V) DG Output Characteristics -1.5 V GS(off -1.0 V ...

Page 4

... UNLESS OTHERWISE NOTED -0.8 -1 U423 U421 1000 = -1 V 1000 Gate-Source Differential Voltage vs. Drain Current 100 25_C A U423 10 U421 1 10 100 I - Drain Current (mA) D Common Mode Rejection Ratio vs. Drain Current 130 DV DG CMRR = 20 log D 120 GS1 GS2 110 100 ...

Page 5

... S-03180—Rev. D, 17-Feb-03 = 25_C UNLESS OTHERWISE NOTED MHz 0.8 0.6 0.4 0.2 0 -16 - kHz 1000 kHz 1000 U421/423 Vishay Siliconix Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage MHz -12 - Gate-Source Voltage (V) GS Equivalent Input Noise Voltage vs. Frequency 100 100 Frequency (Hz) On-Resistance and Output Conductance vs ...

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