2N5912 Vishay, 2N5912 Datasheet
2N5912
Specifications of 2N5912
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2N5912 Summary of contents
Page 1
... Matched N-Channel JFET Pairs Part Number V (V) V GS(off) (BR)GSS 2N5911 –1 to –5 2N5912 –1 to –5 D Two-Chip Design D Minimum Parasitics Ensuring Maximum D High Slew Rate High-Frequency Performance D Improved Op Amp Speed, Settling Time Accuracy D Low Offset/Drift Voltage D Minimum Input Error/Trimming Requirement D Low Gate Leakage ...
Page 2
... GS2 | GS2 T = –55 to 125_C kHz | mA 125_C Limits 2N5911 2N5912 a Typ Min Max Min Max –35 –25 –25 –3.5 –1 –5 –1 – –1 –100 –100 –2 –250 –250 –1 –100 –100 –0.3 –100 –100 –1.5 –0.3 –4 –0.3 –4 0 100 100 5 ...
Page 3
... S-04031—Rev. D, 04-Jun- 100 100 0.1 pA –6 –8 – –0.2 V –0.4 V –0.6 V –0.8 V –1.0 V –1 –0.2 V –0.4 V –0.6 V –0.8 V –1.0 V –1.2 V 0.8 1 2N5911/5912 Vishay Siliconix Gate Leakage Current G(on 125_C 125_C GSS 25_C GSS – Drain-Gate Voltage (V) DG Output Characteristics –5 V GS(off ...
Page 4
... Vishay Siliconix Transfer Characteristics –2 V GS(off –55_C A 6 25_C 4 125_C –0.4 –0.8 –1.2 V – Gate-Source Voltage (V) GS Transconductance vs. Gate-Source Voltage –2 V GS(off –55_C A 25_C 6 125_C –0.4 –0.8 –1.2 V – Gate-Source Voltage (V) GS Circuit Voltage Gain vs. Drain Current –2 V GS(off Assume V ...
Page 5
... Frequency (MHz) Document Number: 70255 S-04031—Rev. D, 04-Jun- –16 –20 100 10 0.1 1000 500 100 10 0.1 500 1000 2N5911/5912 Vishay Siliconix Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage MHz –4 –8 –12 –16 V – Gate-Source Voltage (V) GS ...
Page 6
... Vishay Siliconix Equivalent Input Noise Voltage vs. Frequency 100 – Frequency (Hz) On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 200 160 120 mA kHz 0 0 –2 –4 V – Gate-Source Cutoff Voltage (V) GS(off) www.vishay.com 8 100 k 200 g os 160 120 –6 –8 –10 Output Conductance vs. Drain Current ...