2N5564 Vishay, 2N5564 Datasheet - Page 3

• Manufacturer Part Number: 2N5564
• Description: Transistor
• Manufacturer: Vishay

Specifications of 2N5564

• Power Dissipation Pd: 500mW
• Peak Reflow Compatible (260 C): No
• Transistor Polarity: N Channel
• Current Rating: 50mA
• Continuous Drain Current Id: 30mA
• Gate-source Breakdown Voltage: -40V
• Leaded Process Compatible: No
• Gate-source Cutoff Voltage: -3V
• Mounting Type: Through Hole
• Rohs Compliant: No
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Document Number: 70254
S-04031—Rev. D, 04-Jun-01
100
200
160
120
80
60
40
20
80
40
50
40
30
20
10
0
0
0
Forward Transconductance and Output Conductance
–55
0
0
g
V
I
r
–35
D
DS
fs
GS
= 1 mA
and g
On-Resistance and Drain Current
changes 0.7%/_C
V
V
= 0 V, f = 1 kHz
On-Resistance vs. Temperature
vs. Gate-Source Cutoff Voltage
GS(off)
GS(off)
–2
–2
–15
vs. Gate-Source Cutoff Voltage
r
r
I
DS
os
DS
DSS
@ V
– Gate-Source Cutoff Voltage (V)
– Gate-Source Cutoff Voltage (V)
@ ID = 1 mA, V
@ V
T
g
5
A
fs
DS
– Temperature (_C)
–4
DS
–4
= 15 V
= 15 V, V
25
45
GS
–6
GS
–6
= 0
V
g
= 0
65
GS(off)
os
I
DSS
= –2 V
85
–8
–8
105
_
–10
–10
125
200
160
120
80
40
0
500
400
200
200
100
0
100
80
60
40
20
30
24
18
12
0
6
0
5
4
3
2
1
0
1
0
0
I
T
t
V
D
t
d(off)
A
V
d(on)
DG
t
= 3 mA
d(off)
GS(off)
V
On-Resistance vs. Drain Current
= 25_C
GS(off)
= 5 V, V
–2
2
independent of device V
@
t
V
V
t
r
= –2 V
r
DG
GS(L)
approximately independent of I
– Gate-Source Cutoff Voltage (V)
I
Turn-On Switching
Turn-Off Switching
I
D
D
2N5564/5565/5566
= 5 V, R
GS(L)
t
f
– Drain Current (mA)
– Drain Current (mA)
= –10 V
–4
4
= –10 V
I
D
G
t
Vishay Siliconix
d(on)
10
= 12 mA
= 50 W
@
–6
6
GS(off)
V
GS(off)
= –2 V
www.vishay.com
8
–8
D
100
–10
10
8-3