2N5199 Vishay, 2N5199 Datasheet

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2N5199

Manufacturer Part Number
2N5199
Description
Transistor
Manufacturer
Vishay
Datasheet

Specifications of 2N5199

Power Dissipation Pd
500mW
Peak Reflow Compatible (260 C)
No
Transistor Polarity
N Channel
Current Rating
50mA
Continuous Drain Current Id
7mA
Gate-source Breakdown Voltage
-50V
Leaded Process Compatible
No
Gate-source Cutoff Voltage
-4V
Mounting Type
Through Hole
Rohs Compliant
No
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
The 2N5196/5197/5198/5199 JFET duals are designed for
high-performance differential amplification for a wide range of
precision test instrumentation applications. This series
features tightly matched specs, low gate leakage for accuracy,
and wide dynamic range with I
Gate-Drain, Gate-Source Voltage
Gate Current
Lead Temperature (
Storage Temperature
Operating Junction Temperature
Document Number: 70252
S-04031—Rev. D, 04-Jun-01
D Monolithic Design
D High Slew Rate
D Low Offset/Drift Voltage
D Low Gate Leakage: 5 pA
D Low Noise
D High CMRR: 100 dB
Part Number
2N5196
2N5197
2N5198
2N5199
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1
/
16
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
V
” from case for 10 sec.)
GS(off)
–0.7 to –4
–0.7 to –4
–0.7 to –4
–0.7 to –4
. . . . . . . . . . . . . . . . . . . . . . . . . .
(V)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
G
Monolithic N-Channel JFET Duals
V
guaranteed at V
(BR)GSS
D Tight Differential Match vs. Current
D Improved Op Amp Speed, Settling Time
D Minimum Input Error/Trimming Requirement
D Insignificant Signal Loss/Error Voltage
D High System Sensitivity
D Minimum Error with Large Input Signal
. . . . . . . . . . . . . . . . . .
Accuracy
–50
–50
–50
–50
Min (V)
D
1
–65 to 200_C
–55 to 150_C
DG
G
S
1
g
= 20 V.
1
2
fs
300 _C
50 mA
–50 V
Min (mS)
1
3
1
1
1
1
Top View
TO-71
The hermetically-sealed TO-71 package is available with full
military processing (see Military Information and the
2N5545/5546/5547JANTX/JANTXV data sheet).
For similar products see the low-noise U/SST401 series, the
high-gain 2N5911/5912, and the low-leakage U421/423 data
sheets.
Power Dissipation :
Notes
a.
b.
I
G
6
4
Derate 2 mW/_C above 85_C
Derate 4 mW/_C above 85_C
5
Max (pA)
–15
–15
–15
–15
G
S
2
2
D
2
2N5196/5197/5198/5199
jV
GS1
D Wideband Differential Amps
D High-Speed, Temp-Compensated,
D High Speed Comparators
D Impedance Converters
Per Side
Total
– V
Single-Ended Input Amps
b
GS2
. . . . . . . . . . . . . . . . . . . . . . . . . . .
10
15
5
5
a
j Max (mV)
. . . . . . . . . . . . . . . . . . . . . . . .
Vishay Siliconix
www.vishay.com
250 mW
500 mW
8-1

Related parts for 2N5199

2N5199 Summary of contents

Page 1

... V GS(off) (BR)GSS 2N5196 –0.7 to –4 2N5197 –0.7 to –4 2N5198 –0.7 to –4 2N5199 –0.7 to –4 D Monolithic Design D Tight Differential Match vs. Current D High Slew Rate D Improved Op Amp Speed, Settling Time D Low Offset/Drift Voltage D Minimum Input Error/Trimming Requirement D Low Gate Leakage Insignificant Signal Loss/Error Voltage ...

Page 2

... Vishay Siliconix Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage b Saturation Drain Current Gate Reverse Current Gate Operating Current Gate-Source Voltage Dynamic Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Forward Transconductance Common-Source Output Conductance Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance ...

Page 3

... kHz | –g os1 os2 = 200 – 200 mA CMRR 2N5196/5197/5198/5199 Vishay Siliconix Limits 2N5198 2N5199 a Typ Min Max Min –57 –50 –50 –2 –0.7 –4 –0.7 3 0.7 7 0.7 –10 –25 –20 –50 –5 –15 –15 –0.8 –1.5 –0.2 –3.8 –0.2 2 0.8 ...

Page 4

... Vishay Siliconix Drain Current and Transconductance vs. Gate-Source Cutoff Voltage DSS DSS kHz 0 0 –1 –2 –3 V – Gate-Source Cutoff Voltage (V) GS(off) Output Characteristics –2 V GS(off – Drain-Source Voltage (V) DS Output Characteristics –2 V GS(off) V 1.6 1.2 0.8 0 0.2 0.4 0.6 V – Drain-Source Voltage (V) DS www ...

Page 5

... V = –2 V GS(off) 400 200 0 1 2N5196/5197/5198/5199 Vishay Siliconix Gate-Source Differential Voltage vs. Drain Current 25_C A 2N5199 2N5196 0.01 0.1 I – Drain Current (mA) D Common Mode Rejection Ratio vs. Drain Current DV DG CMRR = 20 log – GS1 GS2 – – 0.01 0.1 I – ...

Page 6

... Vishay Siliconix Common-Source Input Capacitance vs. Gate-Source Voltage MHz –4 –8 –12 V – Gate-Source Voltage (V) GS Equivalent Input Noise Voltage vs. Frequency 200 100 – Frequency (Hz) Common-Source Forward Transconductance vs. Drain Current 2 –2 V GS(off) 2.0 1.5 25_C 1.0 0.5 0 0.01 0.1 I – Drain Current (mA) D www ...

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