2N4856JANTX Vishay, 2N4856JANTX Datasheet - Page 2

• Manufacturer Part Number: 2N4856JANTX
• Description: N CHANNEL JFET, -40V, TO-206AA
• Manufacturer: Vishay

Specifications of 2N4856JANTX

• Breakdown Voltage Vbr: -40V
• Gate-source Cutoff Voltage Vgs(off) Max: -10V
• Power Dissipation Pd: 1.8W
• No. Of Pins: 3
• Peak Reflow Compatible (260 C): No
• Transistor Polarity: N Channel
• Mounting Type: Through Hole
• Zero Gate Voltage Drain Current Idss Min: 50mA
• Rohs Compliant: No
• Leaded Process Compatible: No
• Leakage Current: 250pA
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

2N4856JAN/JANTX/JANTXV Series
Vishay Siliconix
Gate-Drain, Gate-Source Voltage :
Gate Current
Lead Temperature (
Storage Temperature
www.vishay.com
7-2
Static
Gate-Source
Breakdown Voltage
Gate-Source Cutoff Voltage
Saturation Drain Current
Gate Reverse Current
Gate Operating Current
Drain Cutoff Current
Drain-Source On-Voltage
Drain-Source On-Resistance
Gate-Source
Forward Voltage
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
Equivalent Input
Noise Voltage
Switching
Turn-On Time
Turn-Off Time
Parameter
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
c
c
1
/
16
c
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
” from case for 10 seconds)
c
b
c
(2N4856-58)
(2N4859-61)
c
Symbol
V
V
V
r
(BR)GSS
V
. . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . .
I
DS(on)
t
GS(off)
I
I
DS(on)
t
D(off)
C
C
GS(F)
d(on)
DSS
GSS
g
OFF
g
I
e
t
rss
G
os
iss
fs
n
r
. . . . . . . . . . . . . .
V
GS
V
V
V
V
V
V
V
V
I
V
V
V
DD
Test Conditions
DS
I
G
V
See Switching Circuit
See Switching Circuit
–65 to 200_C
GS
= 0 V
DS
DS
DS
DG
G
DG
DS
DG
DG
GS
= –1 mA , V
= 1 mA , V
= 15 V, V
= 10 V, V
= 15 V, I
= –20 V, V
= 0 V, V
= 0 V, V
= 15 V, I
= 10 V, I
= 15 V, V
= 20 V, I
= 20 V, I
= 0 V, I
f = 1 MHz
f = 1 kHz
f = 1 kHz
300 _C
50 mA
–40 V
–30 V
GS
GS
D
D
GS
D
D
GS(H)
D
D
DS
GS
DS
= 0.5 nA
DS
= 10 mA
= 1 mA
= 10 mA
= 1 mA
= 1 mA
= –10 V
= –10 V
T
= –10 V
T
I
I
I
D
D
= 0 V
= 0 V
= 0 V
A
A
D
= 0 V
= 0 V
= 10 mA
= 20 mA
= 150_C
= 150_C
= 5 mA
Operating Junction Temperature
Power Dissipation
Notes
a.
Derate 10.3 mW/_C to T
Typ
0.25
0.35
–55
–13
0.5
0.7
–5
–5
13
25
13
5
6
7
3
3
2
2
a
a
Min
–40
–4
50
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2N4856
_
Max
–250
–500
0.75
–10
175
250
500
25
18
25
C
8
6
3
> 25_C
. . . . . . . . . . . . . . . . . . . . . . . . . .
Min
–40
–2
20
Limits
2N4857
Max
–250
–500
100
250
500
0.5
–6
40
18
50
8
6
4
S-04028—Rev. C, 04-Jun-01
Document Number: 70244
Min
–0.8
–40
8
2N4858
Max
–250
–500
250
500
100
–65 to 200_C
0.5
–4
80
60
18
10
10
8
1800 mW
Unit
mA
mS
nV
pA
nA
pA
nA
mS
pF
ns
V
V
V
W
V
Hz