SST5484-E3 Vishay, SST5484-E3 Datasheet - Page 4
![N CHANNEL JFET, -25V, TO-236](/photos/19/2/190261/3833576_sml.gif)
SST5484-E3
Manufacturer Part Number
SST5484-E3
Description
N CHANNEL JFET, -25V, TO-236
Manufacturer
Vishay
Datasheet
1.SST5485-E3.pdf
(8 pages)
Specifications of SST5484-E3
Breakdown Voltage Vbr
-25V
Gate-source Cutoff Voltage Vgs(off) Max
-3V
Power Dissipation Pd
350mW
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Continuous Drain Current Id
5mA
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
2N/SST5484 Series
Vishay Siliconix
www.vishay.com
4
TYPICAL CHARACTERISTICS (T
100 nA
100 pA
0.1 pA
10 nA
10 pA
1 nA
1 pA
10
20
16
12
8
6
4
2
0
0
8
4
0
0
0
Drain Current and Transconductance
T
T
A
A
V
g
V
GS(off)
= 125_C
= 25_C
vs. Gate-Source Cutoff Voltage
fs
−2
GS(off)
4
2
V
V
Output Characteristics
Gate Leakage Current
I
DS
DG
= −2 V
D
− Gate-Source Cutoff Voltage (V)
= 5 mA
− Drain-Source Voltage (V)
I
g
f = 1 kHz
− Drain-Gate Voltage (V)
DSS
fs
@ V
−4
4
0.1 mA
8
I
@ V
DSS
DS
DS
1 mA
I
= 10 V, V
D
= 10 V, V
= 5 mA
0.1 mA
12
−6
6
I
GSS
1 mA
GS
GS
@ 25_C
V
= 0 V
GS
= 0 V
I
125_C
16
−0.2 V
−0.4 V
−0.6 V
−0.8 V
−1.0 V
−1.2 V
−1.4 V
GSS
A
−8
= 0 V
8
= 25_C UNLESS OTHERWISE NOTED)
@
20
−10
10
10
8
6
4
2
0
500
400
300
200
100
10
15
12
0
8
6
4
2
0
9
6
3
0
0.1
0
0
V
On-Resistance and Output Conductance
GS(off)
Transconductance vs. Drain Current
V
V
r
GS(off)
vs. Gate-Source Cutoff Voltage
DS
−2
GS(off)
= −3 V
2
Common-Source Forward
V
Output Characteristics
DS
= −3 V
I
− Gate-Source Cutoff Voltage (V)
D
− Drain-Source Voltage (V)
r
g
f = 1 kHz
− Drain Current (mA)
DS
os
−4
@
4
@ V
25_C
I
D
DS
= 300 mA, V
1
= 10 V, V
g
−6
6
os
T
S-50148—Rev. G, 24-Jan-05
A
Document Number: 70246
= −55_C
GS
V
f = 1 kHz
GS
125_C
DS
V
= 0 V
GS
= 0 V
= 10 V
−8
8
= 0 V
−0.3 V
−0.6 V
−0.9 V
−1.2 V
−1.5 V
−1.8 V
−10
10
10
100
80
60
40
20
0