VP0808B-E3 Vishay, VP0808B-E3 Datasheet - Page 3

P CHANNEL MOSFET, -80V, TO-39

VP0808B-E3

Manufacturer Part Number
VP0808B-E3
Description
P CHANNEL MOSFET, -80V, TO-39
Manufacturer
Vishay
Datasheet

Specifications of VP0808B-E3

Power Dissipation Pd
6.25W
Operating Temperature Range
-55°C To +150°C
No. Of Pins
3
Termination Type
Through Hole
Continuous Drain Current Id
-3A
On State Resistance
5ohm
Filter Terminals
Through Hole
Rohs Compliant
Yes
Current Rating
-280mA
Drain-source Breakdown Voltage
-80V
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Notes:
a.
b.
c.
d.
e.
f.
Document Number: 70031
S-52895—Rev. D, 16-Jun-97
Analog Switch
Analog Signal Range
Drain-Source
On-Resistance
Source Off
L
Leakage Current
Drain Off
L
Leakage Current
Channel On
Leakage Current
Saturation Drain Current
Digital Input
Input Current with
Input Voltage High
Input Current with
Input Voltage Low
Dynamic Characteristics
Turn-On Time
Turn-Off Time
Source-Off Capacitance
Drain-Off Capacitance
Channel-On
Capacitance
Off Isolation
Power Supplies
Positive Supply Current
Negative Supply Current
Logic Supply Current
Reference Supply Current
Refer to PROCESS OPTION FLOWCHART .
Room = 25 C, Full = as determined by the operating temperature suffix.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet.
Guaranteed by design, not subject to production test.
V
k
k
IN
Parameter
= input voltage to perform proper function.
C
C
t
t
e
Symbol
V
r
ANALOG
C
C
C
OIRR
DS(on)
I
I
I
I
I
I
S(off)
S(off)
D(off)
D(off)
D(on)
I
I
DSS
D(off)
D(on)
INH
t
t
S(off)
INL
I+
I–
I
I
on
off
L
R
f
f = 1 MHz
f
V+ = 15 V, V– = –15 V, V
See Switching Time Test Circuit
See Switching Time Test Circuit
1 MH
1 MHz
V
V
V
I
V
V
S
S
S
Unless Specified
R
S
V+ = 10 V, V– = –20 V
S
V+ = 10 V, V– = –20 V
Test Conditions
f = 1 MHz, R
= –10 mA, V
2 ms Pulse Duration
=
=
= 0 V, V
=
=
V
V
V
V
D
IN
IN
7.5 V, V
7.5 V, V
= V
10 V, V
10 V, V
V
V
= 0 V, or 5 V
= 0 V, or 5 V
IN
IN
S
0 V
IN
V
V
= 5 V
= 0 V
=
V
S
D
= 2 V, 0.8 V
D
D
D
D
D
= –5 V, I
= –5 V, I
L
D
= V
= 75
7.5 V
=
=
=
=
= –7.5 V
5 V
S
10 V
7.5 V
10 V
7.5 V
= 0 V
L
D
= 5 V
S
= 0
= 0
f
Temp
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Room
Full
Full
Hot
Hot
Hot
Hot
Hot
Hot
Full
b
Typ
<0.01
0.05
0.05
0.04
0.03
–0.1
–2.7
300
–30
240
140
>55
7.5
0.6
21
17
17
–1
3
c
Min
–200
–250
–7.5
–55 to 125 C
–2
–5
–2
A Suffix
d
Max
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1000
1000
1000
1000
400
200
1.5
4.5
15
10
20
10
10
10
10
10
20
d
DG180/181/182
Vishay Siliconix
Min
–200
–250
–7.5
–10
–25 to 85 C
–5
–2
B Suffix
d
Max
300
300
300
300
600
250
1.5
4.5
15
15
25
15
15
15
15
10
20
d
Unit
mA
mA
mA
nA
dB
ns
ns
pF
V
A
A
A
A
A
4-3

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