IXGH48N60B3C1 IXYS SEMICONDUCTOR, IXGH48N60B3C1 Datasheet - Page 3

• Manufacturer Part Number: IXGH48N60B3C1
• Description: IGBT,600V,48A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH48N60B3C1

• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 300W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 300W

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3.6
3.2
2.8
2.4
2.0
1.6
1.2
80
70
60
50
40
30
20
10
80
70
60
50
40
30
20
10
0
0
0.0
0.0
5
6
0.4
0.4
7
Fig. 5. Collector-to-Emitter Voltage
Fig. 1. Output Characteristics
Fig. 3. Output Characteristics
0.8
0.8
vs. Gate-to-Emitter Voltage
I
8
C
= 80A
40A
20A
V
V
9
1.2
CE
1.2
GE
V
@ 125ºC
CE
@ 25ºC
- Volts
- Volts
10
- Volts
V
1.6
1.6
GE
V
11
GE
= 15V
13V
11V
= 15V
13V
11V
12
2.0
2.0
7V
5V
13
9V
T
J
2.4
2.4
= 25ºC
14
9V
7V
5V
2.8
2.8
15
300
250
200
150
100
200
180
160
140
120
100
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
50
80
60
40
20
0
0
4.0
-50
0
V
V
GE
4.5
GE
-25
= 15V
2
= 15V
13V
11V
T
J
Fig. 2. Extended Output Characteristics
5.0
= 125ºC
- 40ºC
25ºC
Fig. 4. Dependence of V
4
0
9V
7V
5.5
Fig. 6. Input Admittance
Junction Temperature
T
J
25
6
- Degrees Centigrade
IXGH48N60B3C1
6.0
V
CE
V
@ 25ºC
GE
- Volts
6.5
50
8
- Volts
7.0
10
75
CE(sat)
I
I
I
C
7.5
C
C
= 40A
= 80A
= 20A
100
12
on
8.0
125
14
8.5
150
9.0
16