IXGH36N60B3C1 IXYS SEMICONDUCTOR, IXGH36N60B3C1 Datasheet - Page 4

• Manufacturer Part Number: IXGH36N60B3C1
• Description: IGBT,600V,36A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH36N60B3C1

• Transistor Type: IGBT
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 1.8V
• Power Dissipation Max: 250W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 250W

IXYS Reserves the Right to Change Limits,Test Conditions, and Dimensions.
10,000
1,000
1.00
0.10
0.01
100
10
0.00001
90
80
70
60
50
40
30
20
10
0
0
0
f
= 1 MHz
20
5
40
10
60
Fig. 7. Transconductance
80
0.0001
Fig. 9. Capacitance
15
I
C
100
- Amperes
V
CE
120
20
- Volts
140
25
160
Fig. 11. Maximum Transient Thermal Impedance
C oes
0.001
C res
C ies
T
180
J
30
= - 40ºC
125ºC
25ºC
200
35
220
Pulse Width - Seconds
240
40
0.01
90
80
70
60
50
40
30
20
10
16
14
12
10
0
8
6
4
2
0
100
0
V
I
I
150
T
R
dV / dt < 10V / ns
C
G
CE
J
G
10
= 30A
= 10mA
= 125ºC
= 300V
= 5
Fig. 10. Reverse-Bias Safe Operating Area
Ω
200
20
0.1
250
30
300
Fig. 8. Gate Charge
Q
IXGH36N60B3C1
G
V
- NanoCoulombs
CE
40
350
- Volts
400
50
450
1
60
500
IXYS REF: G_36N60B3C1(55)6-05-09
70
550
80
600
650
10
90