IXGH30N60C3C1 IXYS SEMICONDUCTOR, IXGH30N60C3C1 Datasheet - Page 7

• Manufacturer Part Number: IXGH30N60C3C1
• Description: IGBT,600V,30A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH30N60C3C1

• Transistor Type: IGBT
• Dc Collector Current: 60A
• Collector Emitter Voltage Vces: 3V
• Power Dissipation Max: 220W
• Collector Emitter Voltage V(br)ceo: 600V
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 220W

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10.000
1.000
0.100
0.010
0.001
75
65
55
45
35
25
15
90
80
70
60
50
40
30
20
10
0.00001
25
4
T
V
t
t
R
V
J
CE
r i
G
CE
r i
= 125ºC, V
35
Switching Times vs. Junction Temperature
= 5Ω , V
= 300V
= 300V
6
Switching Times vs. Gate Resistance
45
GE
GE
8
Fig. 18. Inductive Turn-on
= 15V
t
t
Fig. 20. Inductive Turn-on
= 15V
d(on)
d(on)
55
T
- - - -
- - - -
J
10
- Degrees Centigrade
65
R
G
- Ohms
0.0001
75
12
I
85
C
I
= 40A
C
14
= 20A
Fig. 22. Maximum Transient Thermal Impedance for Diode
95
16
I
I
C
C
= 40A
= 20A
105
18
115
0.001
125
20
21
20
19
18
17
16
15
30
28
26
24
22
20
18
16
14
Pulse Width - Second
60
50
40
30
20
10
20
16
12
0
8
4
0
10
0.0
IXGA30N60C3C1 IXGP30N60C3C1
R
V
t
G
CE
r i
= 5Ω , V
= 300V
0.4
0.01
Fig. 21. Forward Current vs. Forward Voltage
Switching Times vs. Collector Current
15
GE
= 15V
0.8
t
Fig. 19. Inductive Turn-on
d(on)
20
- - - -
1.2
I
C
V
25
F
- Amperes
- Volts
T
1.6
J
= 25ºC
IXGH30N60C3C1
T
0.1
J
= 125ºC
2.0
30
2.4
T
T
J
J
35
= 125ºC
IXYS REF: G_30N60C3C1(4D)6-03-09
= 25ºC
2.8
40
24
22
20
18
16
14
12
3.2
1