IXGH20N120A3 IXYS SEMICONDUCTOR, IXGH20N120A3 Datasheet - Page 6

• Manufacturer Part Number: IXGH20N120A3
• Description: IGBT,1200V,20A,TO-247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXGH20N120A3

• Transistor Type: IGBT
• Dc Collector Current: 40A
• Collector Emitter Voltage Vces: 2.5V
• Power Dissipation Max: 180W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor: RoHS Compliant
• Transistor Case Style: TO-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 180W

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
200
180
160
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
0
10
25
t
R
V
t
T
V
r i
CE
G
35
r i
Fig. 20. Inductive Turn-on Switching Times
J
CE
Fig. 18. Inductive Turn-on Switching Times
= 10Ω , V
= 125ºC, V
15
= 960V
= 960V
45
20
GE
I
t
d(on)
GE
C
vs. Junction Temperature
t
= 15V
d(on)
= 40A
55
= 15V
T
vs. Gate Resistance
- - - -
J
- - - -
25
- Degrees Centigrade
R
65
G
- Ohms
30
75
I
I
85
C
C
35
I
= 40A
= 20A
C
= 20A
95
40
105
45
115
125
50
55
50
45
40
35
30
25
20
15
10
5
28
26
24
22
20
18
16
14
160
140
120
100
80
60
40
20
0
20
T
22
t
R
V
J
IXGA20N120A3 IXGP20N120A3
Fig. 19. Inductive Turn-on Switching Times
r i
G
CE
= 125ºC
= 10Ω , V
= 960V
24
t
GE
d(on)
26
= 15V
vs. Collector Current
- - - -
28
I
C
30
- Amperes
32
IXGH20N120A3
34
T
J
= 25ºC
36
IXYS REF: G_20N120A3(4L)10-01-08
38
40
23
22
21
20
19
18
17
16
15