IXA37IF1200HJ IXYS SEMICONDUCTOR, IXA37IF1200HJ Datasheet - Page 5

• Manufacturer Part Number: IXA37IF1200HJ
• Description: IGBT,1200V,58A,ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA37IF1200HJ

• Transistor Type: IGBT
• Dc Collector Current: 58A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 195W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: ISOPLUS-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 195W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
[A]
[A]
[mJ]
I
I
C
C
E
70
60
50
40
30
20
10
70
60
50
40
30
20
10
10
0
0
8
6
4
2
0
0
5
0
Fig. 3 Typ. tranfer characteristics
Fig. 5 Typ. switching energy vs. collector current
Fig. 1 Typ. output characteristics
V
R
V
V
T
GE
VJ
G
CE
GE
T
6
= 15 V
VJ
=
= 125°C
= 600 V
= ±15 V
= 125°C
27
20
7
1
T
VJ
8
= 25°C
V
T
V
CE
VJ
I
GE
C
= 25°C
40
9
[V]
[A]
[V]
2
T
10 11 12 13
VJ
= 125°C
60
3
E
E
on
off
80
Data according to IEC 60747and per diode unless otherwise specified
[mJ]
V
[V]
E
[A]
GE
I
C
70
60
50
40
30
20
10
20
15
10
Fig. 6 Typ. switching energy vs. gate resistance
6
5
4
3
0
5
0
20
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. turn-on gate charge
T
VJ
I
V
V
T
C
I
V
VJ
C
CE
GE
= 125°C
=
CE
20
= 125°C
= 600 V
= ±15 V
= 35 A
= 600 V
1
35 A
V
40
GE
40
= 15 V
IXA37IF1200HJ
17 V
19 V
2
60
V
R
Q
CE
G
G
[ ]
[V]
[nC]
80
3
60
100 120 140
13 V
4
E
E
on
off
20100623c
11 V
9 V
80
5