IXA17IF1200HJ IXYS SEMICONDUCTOR, IXA17IF1200HJ Datasheet - Page 4

• Manufacturer Part Number: IXA17IF1200HJ
• Description: IGBT,1200V,28A,ISOPLUS247
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of IXA17IF1200HJ

• Transistor Type: IGBT
• Dc Collector Current: 28A
• Collector Emitter Voltage Vces: 2.1V
• Power Dissipation Max: 100W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: ISOPLUS-247
• Rohs Compliant: Yes
• Power Dissipation Pd: 100W
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
Die konvexe Form des Substrates ist typ. < 0.04 mm über der Kunststoff- f -
oberfläche der Bauteilunterseite
The convex bow of substrate is typ. < 0.04 mm over plastic surface level of
device bottom side
Die Gehäuseabmessungen entsprechen dem Typ TO-247 AD gemäß JEDEC
außer Schraubloch und L
This drawing will meet all dimensions requiarement of JEDEC outline TO-247 AD
except screw hole and except L
max
.
max
.
IXA17IF1200HJ
20100623a