SKM400GB12E4 SEMIKRON, SKM400GB12E4 Datasheet - Page 4

• Manufacturer Part Number: SKM400GB12E4
• Description: IGBT HALFBRIDGE MODULE 400A 1200V
• Manufacturer: SEMIKRON

Specifications of SKM400GB12E4

• Module Configuration: Dual
• Dc Collector Current: 400A
• Collector Emitter Voltage Vces: 1.2kV
• Operating Temperature Range: -40°C To +150°C
• Transistor Case Style: SEMITRANS 3
• No. Of Pins: 7
• Svhc: No
• Family/system: SEMITRANS
• Voltage (v): 1200
• Current (a): 400
• Chip-type: IGBT 4 (Trench)
• Case: SEMITRANS 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

SKM400GB12E4
4
Fig. 7: Typ. switching times vs. I
Fig. 9: Transient thermal impedance
Fig. 11: CAL diode peak reverse recovery current
C
Rev. 3 – 29.10.2010
Fig. 8: Typ. switching times vs. gate resistor R
Fig. 10: Typ. CAL diode forward charact., incl. R
Fig. 12: Typ. CAL diode peak reverse recovery charge
© by SEMIKRON
G
CC'+EE'