7MBR50UA-120-50 FUJI ELECTRIC, 7MBR50UA-120-50 Datasheet - Page 6

• Manufacturer Part Number: 7MBR50UA-120-50
• Description: IGBT, 7 PACK MOD, 1200V, 50A, M711
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBR50UA-120-50

• Module Configuration: Seven
• Transistor Polarity: N Channel
• Dc Collector Current: 50A
• Collector Emitter Voltage Vces: 2.4V
• Power Dissipation Max: 205W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IGBT Module
40
30
20
10
40
30
20
10
10.0
0
0
1.0
0.1
0
0
0
Collector current vs. Collector-Emitter voltage (typ.)
Collector current vs. Collector-Emitter voltage (typ.)
Capacitance vs. Collector-Emitter voltage (typ.)
Collector-Emitter voltage : VCE [V]
1
1
Collector-Emitter voltage : VCE [V]
Collector-Emitter voltage : VCE [V]
VGE=20V
VGE=0V, f= 1M Hz, Tj= 25°C
T j=25°C
Coes
10
VGE=15V / chip
Tj= 25°C / chip
2
2
15V
[ Brake ]
[ Brake ]
[ Brake ]
12V
3
3
T j=125°C
20
Cies
Cres
4
4
10V
8V
5
5
40
30
20
10
10
0
0
8
6
4
2
0
Collector-Emitter voltage vs. Gate-Emitter voltage (typ.)
5
0
0
Collector current vs. Collector-Emitter voltage (typ.)
20
1
Collector-Emitter voltage : VCE [V]
Gate - Emitter voltage : VGE [ V ]
Vcc=600V, Ic=25A, Tj= 25°C
10
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj=25°C / chip
Tj= 125°C / chip
VGE=20V 15V
[ Brake ]
40
2
[ Brake ]
[ Brake ]
VGE
15
7MBR50UA120
60
3
VCE
20
Ic=30A
Ic=15A
Ic=7.5A
80
4
12V
8V
10V
100
25
5