7MBR35SB-140-50 FUJI ELECTRIC, 7MBR35SB-140-50 Datasheet - Page 6

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7MBR35SB-140-50

Manufacturer Part Number
7MBR35SB-140-50
Description
IGBT, 7 PACK MOD, 1400V, 35A, M712
Manufacturer
FUJI ELECTRIC
Datasheet

Specifications of 7MBR35SB-140-50

Module Configuration
Seven
Transistor Polarity
N Channel
Dc Collector Current
35A
Collector Emitter Voltage Vces
2.2V
Power Dissipation Max
240W
Collector Emitter Voltage V(br)ceo
1.4kV
Transistor Case Style
Module
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IGBT Module
10000
1000
100
60
50
40
30
20
10
60
50
40
30
20
10
0
0
0
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
5
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
1
1
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
10
VGE=0V, f= 1MHz, Tj= 25°C
VGE=15V (typ.)
Tj= 25°C (typ.)
2
2
15
[ Brake ]
[ Brake ]
[ Brake ]
VGE= 20V
20
Tj= 25°C
3
3
15V
25
12V
Tj= 125°C
4
4
30
Cies
Cres
Coes
10V
8V
35
5
5
1000
800
600
400
200
60
50
40
30
20
10
10
0
8
6
4
2
0
0
0
5
0
Collector-Emitter voltage vs. Gate-Emitter voltage
Collector current vs. Collector-Emitter voltage
50
1
Collector - Emitter voltage : VCE [ V ]
Gate - Emitter voltage : VGE [ V ]
10
Vcc=800V, Ic=25A, Tj= 25°C
Dynamic Gate charge (typ.)
Gate charge : Qg [ nC ]
Tj= 125°C (typ.)
100
Tj= 25°C (typ.)
2
[ Brake ]
[ Brake ]
[ Brake ]
15
150
VGE= 20V
3
7MBR35SB140
20
Ic= 50A
Ic= 25A
Ic= 12.5A
200
15V
4
12V
10V
8V
250
25
5
25
20
15
10
5
0

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