7MBP75RA-120-55 FUJI ELECTRIC, 7MBP75RA-120-55 Datasheet - Page 6

• Manufacturer Part Number: 7MBP75RA-120-55
• Description: IGBT, 7 PACK MOD, 1200V, 75A, P610
• Manufacturer: FUJI ELECTRIC

Specifications of 7MBP75RA-120-55

• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.6V
• Power Dissipation Max: 500W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Operating Temperature Range: -20°C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

7MBP75RA120
0.01
600
500
400
300
200
100
0.1
35
30
25
20
15
10
0.001
0
1
5
0
0
0
20
Switching Loss vs. Collector Current
20
Edc=600V,Vcc=15V,Tj=25°C
T ra n s ie n t th e rm a l re s is ta n c e
40
Power derating for IGBT
Case Temperature : Tc (°C)
Collector current : Ic (A)
0.01
40
Pulse width :Pw (sec)
60
(per device)
60
80
100
80
0.1
120
100
140
Eoff
Err
Eon
IGBT
FWD
120
160
1
1050
900
750
600
450
300
150
200
175
150
125
100
35
30
25
20
15
10
75
50
25
0
5
0
0
0
0
0
20
200
Reversed biased safe operating area
Switching Loss vs. Collector Current
20
RBSOA
(Repetitive pulse)
SCSOA
(non-repetitive pulse)
Edc=600V,Vcc=15V,Tj=125°C
Collector-Emitter voltage : Vce (V)
40
400
P o w e r d e r a tin g fo r F W D
Case Temperature : Tc (°C)
Collector current : Ic (A)
Vcc=15V,Tj 125°C
40
60
(p e r d e v ic e )
600
80
60
800
100
80
1000
120
IGBT-IPM
100
1200
Eoff
Eon
140
Err
1400
160
120