6MBI50S-120-50 FUJI ELECTRIC, 6MBI50S-120-50 Datasheet - Page 10

• Manufacturer Part Number: 6MBI50S-120-50
• Description: 6-PACK IGBT MODULE 50A 1200V NPT
• Manufacturer: FUJI ELECTRIC

Specifications of 6MBI50S-120-50

• Module Configuration: Six
• Transistor Polarity: N Channel
• Dc Collector Current: 75A
• Collector Emitter Voltage Vces: 2.65V
• Power Dissipation Max: 360W
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Power Dissipation Pd: 360W
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

20000
10000
1000
120
100
120
100
100
80
60
40
20
80
60
40
20
0
0
Capacitance vs. Collector-Emitter voltage (typ.)
0
0
0
Collector current vs. Collector-Emitter voltage
Collector current vs. Collector-Emitter voltage
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
Collector - Emitter voltage : VCE [ V ]
5
1
1
VGE=0V, f= 1MHz, Tj= 25℃
10
Tj= 25℃
VGE=15V (typ.)
2
2
15
VGE= 20V
20
Tj= 25℃
(typ.)
3
3
15V
25
12V
Tj= 125℃
4
4
30
Cies
Coes
Cres
10V
8V
35
5
5
1000
120
100
800
600
400
200
80
60
40
20
10
0
8
6
4
2
0
0
Collector-Emitter voltage vs. Gate-Emitter voltage
0
5
0
Collector current vs. Collector-Emitter voltage
Collector - Emitter voltage : VCE [ V ]
MS5F 6174
Gate - Emitter voltage : VGE [ V ]
100
1
10
Dynamic Gate charge (typ.)
Vcc=600V, Ic=50A, Tj= 25℃
Gate charge : Qg [ nC ]
Tj= 125℃
Tj= 25℃
200
2
15
300
(typ.)
(typ.)
3
VGE= 20V
20
Ic= 100A
Ic= 50A
Ic= 25A
400
4
H04-004-03a
15V
10
14
10V
12V
8V
500
25
5
25
20
15
10
5
0