2MBI450U4J-120-50 FUJI ELECTRIC, 2MBI450U4J-120-50 Datasheet - Page 10

• Manufacturer Part Number: 2MBI450U4J-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 450A, M250
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI450U4J-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 450A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 2.08kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

cate-
gorie
Test
s
1 Terminal Strength
2 Mounting Strength
3 Vibration
4 Shock
5 PCB Mounting Strength
1 High Temperature Storage
2 Low Temperature Storage
3 Temperature Humidity
4 Unsaturated
5 Temperature Cycle
6 Thermal Shock
1 High temperature Reverse Bias
2 High temperature Bias
3 Temperature Humidity Bias
4 Intermitted Operating Life
(Pull test)
( for gate )
(Power cycling)
( for IGBT )
Pressurized Vapor
Storage
Test items
Reliability Test Results
(Aug.-2001 edition)
Condition code C
Condition code B
Condition code B
Condition code A
Test Method 401
Test Method 402
Test Method 403
Test Method 404
Test Method 402
Test Method 201
Test Method 202
Test Method 103
Test Method 103
Test Method 105
Test Method 307
Test Method 101
Test Method 101
Test Method 102
Test Method 106
EIAJ ED-4701
Test code C
Test code E
Reference
method Ⅰ
MethodⅠ
methodⅡ
methodⅡ
norms
MS5F6858
Number
sample
of test
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
Number
sample
failure
of
0
0
0
0
0
0
0
0
0
0
0
0
0
0
0
10
H04-004-03a
15