2MBI225U4N-120-50 FUJI ELECTRIC, 2MBI225U4N-120-50 Datasheet - Page 11

• Manufacturer Part Number: 2MBI225U4N-120-50
• Description: IGBT, 2 PACK MOD, 1200V, 225A, M254
• Manufacturer: FUJI ELECTRIC

Specifications of 2MBI225U4N-120-50

• Module Configuration: Dual
• Transistor Polarity: N Channel
• Dc Collector Current: 225A
• Collector Emitter Voltage Vces: 2.05V
• Power Dissipation Max: 1.04kW
• Collector Emitter Voltage V(br)ceo: 1.2kV
• Transistor Case Style: Module
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
10000
40
30
20
10
1000
1000
0
100
100
0.1
10
10
0.1
Vcc=600V, VGE=±15V, RG=3.0Ω, Tj=25
0
Vcc=600V, Ic=225A, VGE=±15V,
Vcc=600V, Ic=225A, VGE=±15V, Tj=125
Switching time vs. Collector current (typ.)
Switching time vs. Gate resistance (typ.)
Switching loss vs. Gate resistance (typ.)
Gate resistance : RG [ Ω ]
100
Gate resistance : RG [ Ω ]
Collector current : Ic [ A ]
1.0
1.0
ton
200
10.0
10.0
toff
Tj=25
300
tf
Eoff
Eon
ton
toff
tr
o
o
Err
C
C
o
C
tr
tf
100.0
100.0
400
40
30
20
10
600
450
300
150
10000
0
1000
+VGE=15V, -VGE <= 15V, RG >= 3.0Ω,
0
100
0
10
MS5F6508
0
Vcc=600V, VGE=±15V, RG=3.0Ω, Tj=125
0
Switching loss vs. Collector current (typ.)
Switching time vs. Collector current (typ.)
75
Vcc=600V, VGE=±15V, RG=3.0Ω
Reverse bias safe operating area (max.)
Collector-Emitter voltage : VCE [ V ]
Stray inductance <= 100nH
400
100
Collector current : Ic [ A ]
150
Collector current : Ic [ A ]
225
800
200
300
Eon(25
1200
Tj <= 125
tr
300
H04-004-03a
11
Eoff(25
Eoff(125
Err(125
Eon(125
Err(25
375
tf
o
C)
o
14
C
ton
toff
o
o
C
C)
o
o
C)
1600
C)
o
o
400
C)
450
C)
a