2MBI200SB-120-50 FUJI ELECTRIC, 2MBI200SB-120-50 Datasheet
2MBI200SB-120-50
Specifications of 2MBI200SB-120-50
Related parts for 2MBI200SB-120-50
2MBI200SB-120-50 Summary of contents
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... IGBT MODULE (S series) 1200V / 200A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive Amplifier Uninterruptible Power Supply Industrial machines, such as Welding machines Maximum Ratings and Characteristics Absolute Maximum Ratings (at Tc=25° ...
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... Characteristics (Representative) Collector current vs. Collector-Emiiter voltage Tj= 25°C (typ.) 500 VGE= 20V 400 300 200 100 Collector - Emitter voltage : VCE [ V ] Collector current vs. Collector-Emiiter voltage VGE=15V (typ.) 500 Tj= 25°C 400 300 200 100 Collector - Emitter voltage : VCE [ V ] Capacitance vs. Collector-Emiiter voltage (typ.) VGE=0V, f= 1MHz, Tj= 25° ...
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... Switching time vs. Collector current (typ.) Vcc=600V, VGE=±15V, Rg= 4.7Ω, Tj= 25°C 1000 toff 500 ton t r 100 100 Collector current : Switching time vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=±15V, Tj= 25°C 5000 1000 500 100 Gate resistance : Rg [ Ω ] Switching loss vs. Gate resistance (typ.) Vcc=600V, Ic=200A, VGE=± ...
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... Forward current vs. Forward on voltage (typ.) 500 400 300 200 100 Forward on voltage : Transient thermal resistance 1 0.1 0.05 0.01 1E-3 0 .001 0.01 Pulse width : Pw [ sec ] Tj=125°C Tj=25° FWD IGBT 0 Reverse recovery characteristics (typ.) Vcc=600V, VGE=±15V, Rg=4.7Ω 500 Irr(125° ...
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... Outline Drawing ( Unit : mm ) Outline Drawings Equivalent circuit Equivalent Circuit Schematic MS5F 4921 ���������� IGBT Modules 3 8 ...
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... This Catalog contains the product specifications, characteristics, data, materials, and structures as of October 2008. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. ...