ATF-531P8-BLK Avago Technologies US Inc., ATF-531P8-BLK Datasheet - Page 6

• Manufacturer Part Number: ATF-531P8-BLK
• Description: PHEMT FET, 4V, LPCC
• Manufacturer: Avago Technologies US Inc.

Specifications of ATF-531P8-BLK

• Drain Source Voltage Vds: 4V
• Continuous Drain Current Id: 300mA
• Power Dissipation Pd: 1W
• Noise Figure Typ: 0.6dB
• Rf Transistor Case: LPCC
• No. Of Pins: 8
• Frequency Max: 6GHz
• Frequency Min: 50MHz
• Gain: 20dB
• Configuration: Single Dual Source
• Operating Temperature (max): 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Current Rating: 135A
• Drain Current Idss Max: 135mA
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note:
Bias current for the above charts are quiescent conditions. Actual level may increase or decrease depending on amount of RF drive. The objective
of load pull is to optimize OIP3 and therefore may trade‑off Small Signal Gain, P1dB and VSWR.
6
ATF-531P8 Typical Performance Curves, continued (at 5°C unless specified otherwise)
Tuned for Optimal OIP3
Figure 23. PAE vs. I
Figure 17. PAE vs. I
Figure 20. OIP3 vs. I
60
50
40
30
20
10
45
40
35
30
25
20
60
50
40
30
20
10
0
0
75
75
75
90
90
90
105
105
105
120
120
120
I
I
I
dq
dq
dq
dq
ds
ds
(mA)
(mA)
(mA)
and V
and V
and V
135
135
135
ds
ds
ds
150
150
150
at 5.8 GHz.
at 900 MHz.
at 5.8 GHz.
3V
4V
5V
3V
4V
5V
3V
4V
5V
165
165
165
180
180
180
Figure 18. PAE vs. I
Figure 21. Small Signal Gain vs. I
at 5.8 GHz.
12
10
60
50
40
30
20
10
0
8
6
4
2
0
75
75
90
90
105
105
120
120
I
I
dq
dq
ds
(mA)
(mA)
and V
135
135
ds
150
150
at 2 GHz.
3V
4V
5V
ds
3V
4V
5V
165
165
and V
180
180
ds
Figure 22. P1dB vs. I
Figure 19. PAE vs. I
30
25
20
15
10
60
50
40
30
20
10
0
75
75
90
90
105
105
120
I
120
I
dq
dq
dq
dq
(mA)
(mA)
and V
and V
135
135
ds
ds
150
150
at 3.9 GHz.
at 5.8 GHz.
3V
4V
5V
3V
4V
5V
165
165
180
180