BZM55C3V9-TR Vishay, BZM55C3V9-TR Datasheet - Page 2

ZENER DIODE, 500mW, 4.1V, MICROMELF

BZM55C3V9-TR

Manufacturer Part Number
BZM55C3V9-TR
Description
ZENER DIODE, 500mW, 4.1V, MICROMELF
Manufacturer
Vishay
Datasheets

Specifications of BZM55C3V9-TR

Zener Voltage Vz Typ
4.1V
Power Dissipation Pd
500mW
Diode Case Style
MicroMELF
No. Of Pins
2
Diode Type
Zener
Peak Reflow Compatible (260 C)
Yes
Termination Type
SMD
Zener Voltage
3.9 V
Voltage Tolerance
5 %
Voltage Temperature Coefficient
- 0.065 % / C
Power Dissipation
500 mW
Maximum Reverse Leakage Current
2 uA
Maximum Zener Impedance
90 Ohms
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Package / Case
DO-213AB
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BZM55C3V9-TR
Manufacturer:
VISHAY/威世
Quantity:
20 000
BZM55-Series
Vishay Semiconductors
Electrical Characteristics
BZM55C..
Notes:
1)
*)
www.vishay.com
2
Additionnal measurement of voltage group 9V1 to 75 % at 95 % V
t
p
BZM55C9V1 *
BZM55C2V4
BZM55C2V7
BZM55C3V0
BZM55C3V3
BZM55C3V6
BZM55C3V9
BZM55C4V3
BZM55C4V7
BZM55C5V1
BZM55C5V6
BZM55C6V2
BZM55C6V8
BZM55C7V5
BZM55C8V2
BZM55C10 *
BZM55C11 *
BZM55C12 *
BZM55C13 *
BZM55C15 *
BZM55C16 *
BZM55C18 *
BZM55C20 *
BZM55C22 *
BZM55C24 *
BZM55C27 *
BZM55C30 *
BZM55C33 *
BZM55C36 *
BZM55C39 *
BZM55C43 *
BZM55C47 *
BZM55C51 *
BZM55C56 *
BZM55C62 *
BZM55C68 *
BZM55C75 *
Part number
≤ 10 ms, T/t
p
> 1000
min.
2.28
10.4
11.4
12.4
13.8
15.3
16.8
18.8
20.8
22.8
25.1
Zener voltage
2.5
2.8
3.1
3.4
3.7
4.4
4.8
5.2
5.8
6.4
7.7
8.5
9.4
28
31
34
37
40
44
48
52
58
64
70
4
7
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
V
range
Z
For technical questions within your region, please contact one of the following:
at I
V
ZT
1)
max.
2.56
11.6
12.7
14.1
15.6
17.1
19.1
21.2
23.3
25.6
28.9
2.9
3.2
3.5
3.8
4.1
4.6
5.4
6.6
7.2
7.9
8.7
9.6
0.6
32
35
38
41
46
50
54
60
66
72
79
5
6
f = 1kHz
r
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
zjT
110
125
135
150
200
250
I
< 8
< 7
< 7
ZT
resistance
Dynamic
at
,
Ω
f = 1kHz
< 1000
< 1000
< 1000
< 1500
r
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
zjK
< 50
< 50
< 50
< 70
< 70
< 90
I
ZK
at
,
current
Test
mA
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
I
ZT
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
zmin.
≤ 35 nA at T
- 0.09
- 0.09
- 0.08
- 0.08
- 0.08
- 0.06
- 0.05
- 0.05
- 0.02
-0.08
min.
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
Temperature
coefficient
TK
%/K
DiodesEurope@vishay.com
VZ
j
25 °C
- 0.06
- 0.06
- 0.05
- 0.05
- 0.05
- 0.05
- 0.03
max.
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.1
current
Test
mA
0.5
0.5
0.5
0.5
0.5
0.5
0.5
0.5
I
ZK
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
= 25 °C
at T
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 50
< 10
Reverse leakage current
< 4
< 2
< 2
< 2
< 1
I
R
Document Number 85597
amb
µA
Rev. 2.0, 26-Aug-10
= 150 °C
at T
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
< 10
< 10
< 10
< 10
< 10
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 2
< 5
< 5
< 5
I
R
amb
at V
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
V
1
1
1
1
1
1
1
1
1
1
2
3
5
R

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