BZT03C24-TR Vishay, BZT03C24-TR Datasheet

DIODE, ZENER, 24V, 3.25W

BZT03C24-TR

Manufacturer Part Number
BZT03C24-TR
Description
DIODE, ZENER, 24V, 3.25W
Manufacturer
Vishay
Datasheet

Specifications of BZT03C24-TR

Zener Voltage Vz Typ
24V
Power Dissipation Max
1.3W
Diode Case Style
SOD-57
No. Of Pins
2
Device Marking
BZT03-C24
Diode Type
Zener
External Diameter
3.81mm
External Length / Height
4.57mm
Forward
RoHS Compliant
Forward Current If Max
500mA
Rohs Compliant
Yes

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
BZT03C24-TR
Quantity:
20 000
Silicon Zener-Diodes with Surge Current Specification
Features
Applications
Medium power voltage regulators and medium power
transient suppression circuits
Mechanical Data
Case:SOD57
Weight: 370 mg (max.500 mg)
Packaging Codes/Options:
TAP / 5 K Ammopack (52 mm tape) / 25 K/box
TR / 5 K 10" reel
Absolute Maximum Ratings
T
Thermal Characteristics
T
Electrical Characteristics
T
Document Number 85599
Rev. 4, 10-Sep-03
VISHAY
• Glass passivated junction
• Hermetically sealed package
• Clamping time in picoseconds
Power dissipation
Repetitive peak reverse power
dissipation
Non repetitive peak surge power
dissipation
Junction temperature
Storage temperature range
Junction ambient
Forward voltage
amb
amb
amb
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
Parameter
Parameter
Parameter
l = 10 mm, T
on PC board with spacing 25 mm
l = 10 mm, T
T
t
I
p
F
amb
L
= 100 µs, T
= 0.5 A
= constant
Test condition
= 25 °C
Test condition
Test condition
L
j
= 25 °C
= 25 °C
Symbol
V
Symbol
P
F
P
Symbol
T
P
P
ZRM
ZSM
R
R
T
stg
V
V
j
thJA
thJA
Min
- 65 to + 175
Vishay Semiconductors
BZT03..Series
Value
Value
3.25
Typ.
600
175
100
1.3
10
46
Max
1.2
949539
www.vishay.com
K/W
K/W
Unit
Unit
°C
°C
W
W
W
W
Unit
V
1

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BZT03C24-TR Summary of contents

Page 1

... Rev. 4, 10-Sep-03 Test condition Symbol = 25 ° ZRM = 25 ° ZSM stg Symbol R thJA R thJA Test condition Symbol V F BZT03..Series Vishay Semiconductors 949539 Value Unit 3. 600 W 175 ° 175 °C Value Unit 46 K/W 100 K/W Min Typ. Max 1.2 www.vishay.com Unit V ...

Page 2

... BZT03C160 153 160 171 BZT03C180 168 180 191 BZT03C200 188 200 212 BZT03C220 208 220 233 BZT03C240 228 240 256 BZT03C270 251 270 289 1) 10/1000 exp. falling pulse tp = 1000 µs down Stand-off voltage = recommended suplly voltage www.vishay.com 2 Dynamic Test Temperature ...

Page 3

... BZT03..Series Vishay Semiconductors Reverse Clamping Stand-off Leakage Current (CL RMS µA µ max max max 1500 4.4 9.5 34 ...

Page 4

... BZT03..Series Vishay Semiconductors Typical Characteristics ( Figure 1. Epoxy glass hard tissue, board thickness 1.5 mm, ≤100 K/W R thJA 4 l l=10mm 3 15mm T =constant L 2 20mm 1 see Fig 120 160 T – Ambient T emperature ( ° 9584 amb Figure 2. Total Power Dissipation vs. Ambient Temperature Package Dimensions in mm ...

Page 5

... Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 ...

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