LL4150-GS08 Vishay, LL4150-GS08 Datasheet - Page 2

SWITCHING DIODE, 50V, 300mA, SOD-80

LL4150-GS08

Manufacturer Part Number
LL4150-GS08
Description
SWITCHING DIODE, 50V, 300mA, SOD-80
Manufacturer
Vishay
Datasheet

Specifications of LL4150-GS08

Diode Type
Small Signal
Forward Current If(av)
300mA
Repetitive Reverse Voltage Vrrm Max
50V
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
4ns
Forward Surge Current Ifsm Max
4A
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
LL4150
Vishay Semiconductors
Electrical Characteristics
T
Typical Characteristics
T
www.vishay.com
2
Forward voltage
Reverse current
Diode capacitance
Reverse recovery time
amb
amb
Figure 1. Reverse Current vs. Junction Temperature
= 25 °C, unless otherwise specified
= 25 °C, unless otherwise specified
94 9100
94 9162
Figure 2. Forward Current vs. Forward Voltage
1000
0.01
100
100
Parameter
0.1
10
0.1
10
1
1
0
0
T
Scattering Limit
40
0.4
j
- Junction Temperature (°C)
V
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
- Forward Voltage (V)
0.8
For technical questions within your region, please contact one of the following:
80
Scattering Limit
120
1.2
i
R
I
V
F
= 0.1 x I
R
V
= I
V
T
= 50 V, T
R
R
Test condition
V
R
j
I
I
= 0, f = 1 MHz,
= 50 V
= 25 °C
160
I
I
F
F
V
HF
I
F
F
1.6
= 10 to 100 mA,
F
= 100 mA
= 200 mA
R
= 10 mA
= 50 mA
= 1 mA
= 50 mV
= 50 V
R
, R
j
200
= 150 °C
L
2.0
= 100 Ω
Symbol
C
V
V
V
V
V
I
I
t
R
R
rr
F
F
F
F
F
D
DiodesEurope@vishay.com
Min.
540
660
760
820
870
Typ.
Document Number 85558
Max.
1000
620
740
860
920
100
100
2.5
4
Rev. 1.8, 01-Sep-10
Unit
mV
mV
mV
mV
mV
nA
µA
pF
ns

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