VS-30EPH06PBF Vishay, VS-30EPH06PBF Datasheet

HYPERFAST DIODE, 30A, 600V TO-247AC

VS-30EPH06PBF

Manufacturer Part Number
VS-30EPH06PBF
Description
HYPERFAST DIODE, 30A, 600V TO-247AC
Manufacturer
Vishay
Datasheet

Specifications of VS-30EPH06PBF

Repetitive Reverse Voltage Vrrm Max
600V
Forward Current If(av)
30A
Forward Voltage Vf Max
2.6V
Reverse Recovery Time Trr Max
35ns
Forward Surge Current Ifsm Max
300A
Diode Type
Fast Recovery
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
600 V
Forward Voltage Drop
2.6 V
Recovery Time
35 ns
Forward Continuous Current
30 A
Max Surge Current
300 A
Reverse Current Ir
50 uA
Mounting Style
Through Hole
Package / Case
TO-247AC Modified
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VS-30EPH06PBF
Manufacturer:
VISHAY
Quantity:
2 000
Part Number:
VS-30EPH06PBF
Manufacturer:
IR
Quantity:
20 000
Company:
Part Number:
VS-30EPH06PBF
Quantity:
70 000
Document Number: 94018
Revision: 04-Apr-11
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
PRODUCT SUMMARY
ABSOLUTE MAXIMUM RATINGS
PARAMETER
Peak repetitive reverse voltage
Average rectified forward current
Non-repetitive peak surge current
Operating junction and storage temperatures
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
Reverse leakage current
Junction capacitance
Series inductance
TO-247AC modified
Diode variation
Package
T
V
t
J
rr
I
F
F(AV)
V
max.
at I
typ.
R
F
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
SYMBOL
For technical questions within your region, please contact one of the following:
Hyperfast Rectifier, 30 A FRED Pt
V
V
V
C
L
I
BR
R
TO-247AC modified (2 pins)
S
R
F
T
,
See Recovery table
Cathode
I
I
I
V
T
V
Measured lead to lead 5 mm from package body
Single die
R
F
F
1
R
J
R
common
175 °C
= 30 A
= 30 A, T
cathode
= 100 μA
600 V
= 150 °C, V
2.6 V
30 A
= V
= 600 V
This document is subject to change without notice.
Base
J
SYMBOL
R
= 25 °C unless otherwise specified)
T
2
V
rated
I
J
I
F(AV)
Anode
FSM
, T
RRM
J
Stg
= 150 °C
TEST CONDITIONS
3
R
= V
R
T
T
rated
C
J
= 25 °C
TEST CONDITIONS
= 116 °C
FEATURES
• Hyperfast recovery time
• Low forward voltage drop
• 175 °C operating junction temperature
• Low leakage current
• Single diode device
• Compliant to RoHS Directive 2002/95/EC
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
State of the art hyperfast recovery rectifiers designed with
optimized performance of forward voltage drop, hyperfast
recovery time and soft recovery.
The planar structure and the platinum doped life time
control guarantee the best overall performance, ruggedness
and reliability characteristics.
These devices are intended for use in PFC boost stage in
the AC/DC section of SMPS, inverters or as freewheeling
diodes.
Their extremely optimized stored charge and low recovery
current minimize the switching losses and reduce over
dissipation in the switching element and snubbers.
DiodesEurope@vishay.com
MIN.
600
-
-
-
-
-
-
Vishay Semiconductors
- 65 to 175
VALUES
600
300
30
®
VS-30EPH06PbF
TYP.
1.34
2.0
0.3
3.5
60
33
-
www.vishay.com/doc?91000
MAX.
1.75
500
2.6
50
-
-
-
www.vishay.com
UNITS
°C
V
A
UNITS
μA
nH
pF
V
1

Related parts for VS-30EPH06PBF

VS-30EPH06PBF Summary of contents

Page 1

... 150 ° rated 150 ° rated 600 V R Measured lead to lead 5 mm from package body DiodesEurope@vishay.com This document is subject to change without notice. VS-30EPH06PbF Vishay Semiconductors ® VALUES UNITS 600 300 - 65 to 175 °C MIN. TYP. MAX. UNITS 600 - - V - 2.0 2.6 - 1.34 1 ...

Page 2

... VS-30EPH06PbF Vishay Semiconductors DYNAMIC RECOVERY CHARACTERISTICS (T PARAMETER SYMBOL Reverse recovery time t rr Peak recovery current I RRM Reverse recovery charge Q rr THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range Thermal resistance, R thJC junction to case per leg Thermal resistance, R thJA ...

Page 3

... V - Reverse Voltage ( 0.01 0.001 0.01 0 Rectangular Pulse Duration (s) 1 Characteristics thJC This document is subject to change without notice. VS-30EPH06PbF ® Vishay Semiconductors T = 175 ° 150 ° 125 ° 100 ° °C J 100 200 300 400 500 ...

Page 4

... VS-30EPH06PbF Vishay Semiconductors 180 160 DC 140 Square wave (D = 0.50) Rated V applied R 120 100 See note ( Average Forward Current (A) F(AV) Fig Maximum Allowable Case Temperature vs. Average Forward Current RMS limit Average Forward Current (A) F(AV) Fig Forward Power Loss Characteristics ...

Page 5

... RRM dI /dt ( area under curve defined and I RRM Q (5) dI /dt - peak rate of change of (rec)M current during t and 0.50 I RRM RRM Fig Reverse Recovery Waveform and Definitions This document is subject to change without notice. VS-30EPH06PbF ® Vishay Semiconductors ( RRM (5) / RRM = rr 2 portion www ...

Page 6

... VS-30EPH06PbF Vishay Semiconductors ORDERING INFORMATION TABLE VS- Device code Tube standard pack quantity: 25 pieces Dimensions Part marking information www.vishay.com For technical questions within your region, please contact one of the following: 6 DiodesAmericas@vishay.com, DiodesAsia@vishay.com, THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT ...

Page 7

... Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part ...

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