ESH2B-E3/52T Vishay, ESH2B-E3/52T Datasheet - Page 3

• Manufacturer Part Number: ESH2B-E3/52T
• Description: FAST DIODE, 2A, 100V, DO-214AA
• Manufacturer: Vishay

Specifications of ESH2B-E3/52T

• Repetitive Reverse Voltage Vrrm Max: 100V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 930mV
• Reverse Recovery Time Trr Max: 25ns
• Forward Surge Current Ifsm Max: 60A
• Diode Type: Fast Recovery
• Voltage - Forward (vf) (max) @ If: 930mV @ 2A
• Voltage - Dc Reverse (vr) (max): 100V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 2µA @ 100V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 35ns
• Mounting Type: Surface Mount
• Package / Case: DO-214AA, SMB
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 100 V
• Forward Voltage Drop: 0.93 V
• Recovery Time: 25 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 60 A
• Reverse Current Ir: 2 uA
• Mounting Style: SMD/SMT
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Details

PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 84649
Revision: 27-Aug-07
Figure 3. Typical Instantaneous Forward Characteristics
1000
0.01
0.01
100
100
0.1
0.1
10
10
Figure 4. Typical Reverse Leakage Characteristics
1
1
0.2
20
T
J
Percent of Rated Peak Reverse Voltage (%)
= 125 °C
T
0.4
J
Instantaneous Forward Voltage (V)
= 150 °C
40
T
J
0.6
= 175 °C
T
J
= 175 °C
0.096 (2.44)
0.084 (2.13)
T
0.077 (1.95)
0.086 (2.20)
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J
0.060 (1.52)
0.030 (0.76)
0.8
= 150 °C
T
For technical questions within your region, please contact one of the following:
60
T
J
J
= 125 °C
= 25 °C
T
J
= 25 °C
1.0
80
DO-214AA (SMB)
1.2
0.220 (5.59)
0.205 (5.21)
0.180 (4.57)
0.160 (4.06)
Cathode Band
100
1.4
0.008 (0.2)
0 (0)
0.155 (3.94)
0.130 (3.30)
0.012 (0.305)
0.006 (0.152)
0.060 MIN.
(1.52 MIN.)
(2.18 MIN.)
0.086 MIN.
100
100
10
10
1
1
0.01
0.1
Figure 6. Typical Transient Thermal Impedance
Vishay General Semiconductor
Mounting Pad Layout
ESH2B, ESH2C & ESH2D
Figure 5. Typical Junction Capacitance
0.220 REF.
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
(2.159 MAX.)
0.085 MAX.
1
10
10
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100
100
3