BYW33-TR Vishay, BYW33-TR Datasheet - Page 3

AVALANCHE DIODE, 2A, 300V, SOD-57

BYW33-TR

Manufacturer Part Number
BYW33-TR
Description
AVALANCHE DIODE, 2A, 300V, SOD-57
Manufacturer
Vishay
Datasheet

Specifications of BYW33-TR

Repetitive Reverse Voltage Vrrm Max
300V
Forward Current If(av)
2A
Forward Voltage Vf Max
1.1V
Reverse Recovery Time Trr Max
200ns
Forward Surge Current Ifsm Max
50A
Diode Type
Fast Recovery
Product
Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
300 V
Forward Voltage Drop
1.1 V at 1 A
Recovery Time
200 ns
Forward Continuous Current
2 A
Max Surge Current
50 A
Reverse Current Ir
5 uA
Mounting Style
SMD/SMT
Package / Case
SOD-57
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
Document Number: 86048
Rev. 1.7, 30-Jul-10
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
16348
300
250
200
150
100
50
0
25
20543
V
R
= V
50
T
j
RRM
- Junction Temperature (°C)
at 80 % V
75
1000
P
100
949561
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
R
10
-Limit
1
For technical questions within your region, please contact one of the following:
10
26 (1.024) min.
100
-5
R
t
p
/T = 0.5
at 100 % V
10
P
125
0.2
0.1
0.02
0.01
R
-4
-Limit
Fast Avalanche Sinterglass Diode
150
10
R
-3
t
p
175
- Pulse Length (s)
10
BYW32, BYW33, BYW34, BYW35, BYW36
-2
Fig. 7 - Thermal Response
Single pulse
10
4 (0.157) max.
-1
10
0
10
1
16349
Fig. 6 - Diode Capacitance vs. Reverse Voltage
DiodesEurope@vishay.com
I
40
35
30
25
20
15
10
FRM
100 °C
Forward Current (A)
5
0
0.1
70 °C
- Repetitive Peak
10
0
V
R
26 (1.024) min.
RRM
thJA
T
amb
= 100 K/W
V
= 600 V
= 25 °C
10
Vishay Semiconductors
R
45 °C
- Reverse Voltage (V)
1
50 °C
1
10
f = 1 MHz
www.vishay.com
100
3

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