BYW32-TR Vishay, BYW32-TR Datasheet - Page 3

AVALANCHE DIODE, 200V, 2A, SOD-57

BYW32-TR

Manufacturer Part Number
BYW32-TR
Description
AVALANCHE DIODE, 200V, 2A, SOD-57
Manufacturer
Vishay
Datasheet

Specifications of BYW32-TR

Repetitive Reverse Voltage Vrrm Max
200V
Reverse Recovery Time Trr Max
200ns
Forward Surge Current Ifsm Max
50A
Diode Case Style
SOD-57
No. Of Pins
2
Diode Type
Standard Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
Document Number: 86048
Rev. 1.7, 30-Jul-10
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature
16348
300
250
200
150
100
50
0
25
20543
V
R
= V
50
T
j
RRM
- Junction Temperature (°C)
at 80 % V
75
1000
P
100
949561
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
R
10
-Limit
1
For technical questions within your region, please contact one of the following:
10
26 (1.024) min.
100
-5
R
t
p
/T = 0.5
at 100 % V
10
P
125
0.2
0.1
0.02
0.01
R
-4
-Limit
Fast Avalanche Sinterglass Diode
150
10
R
-3
t
p
175
- Pulse Length (s)
10
BYW32, BYW33, BYW34, BYW35, BYW36
-2
Fig. 7 - Thermal Response
Single pulse
10
4 (0.157) max.
-1
10
0
10
1
16349
Fig. 6 - Diode Capacitance vs. Reverse Voltage
DiodesEurope@vishay.com
I
40
35
30
25
20
15
10
FRM
100 °C
Forward Current (A)
5
0
0.1
70 °C
- Repetitive Peak
10
0
V
R
26 (1.024) min.
RRM
thJA
T
amb
= 100 K/W
V
= 600 V
= 25 °C
10
Vishay Semiconductors
R
45 °C
- Reverse Voltage (V)
1
50 °C
1
10
f = 1 MHz
www.vishay.com
100
3

Related parts for BYW32-TR