1N4007GPHE3/54 Vishay, 1N4007GPHE3/54 Datasheet - Page 3

• Manufacturer Part Number: 1N4007GPHE3/54
• Description: Diode
• Manufacturer: Vishay

Specifications of 1N4007GPHE3/54

• Repetitive Reverse Voltage Vrrm Max: 1kV
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1.1V
• Reverse Recovery Time Trr Max: 2µs
• Forward Surge Current Ifsm Max: 30A
• Diode Type: Standard Recovery
• Voltage - Forward (vf) (max) @ If: 1.1V @ 1A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 2µs
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant

Document Number: 88504
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
0.01
100
Fig. 4 - Typical Instantaneous Forward Characteristics
0.1
0.1
50
45
40
35
30
25
20
15
10
10
10
Fig. 3 - Non-Repetitive Peak Forward Surge Current
1
1
0.6
25
0
Percent of Rated Peak Reverse Voltage (%)
Fig. 5 - Typical Reverse Characteristics
Square Waveform
Instantaneous Forward Voltage (V)
0.8
20
t
p
50
Ambient Temperature (°C)
T
T
J
J
1.0
40
= 100 °C
= 25 °C
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t
t
t
For technical questions within your region, please contact one of the following:
p
p
p
75
= 1 ms
= 2 ms
= 5 ms
Pulse Width = 300 μs
1.2
60
1 % Duty Cycle
T
J
= 25 °C
100
1.4
80
This datasheet is subject to change without notice.
125
100
1.6
100
100
0.1
10
10
1
1
0.01
0.1
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Fig. 7 - Typical Transient Thermal Impedance
1N4001GP thru 1N4007GP
Vishay General Semiconductor
Fig. 6 - Typical Junction Capacitance
0.1
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
www.vishay.com/doc?91000
10
V
sig
f = 1.0 MHz
10
T
J
= 50 mV
= 25 °C
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p-p
100
100
3