1N4007E-E3/54 Vishay, 1N4007E-E3/54 Datasheet - Page 3

• Manufacturer Part Number: 1N4007E-E3/54
• Description: STANDARD DIODE, 1A, 1KV, DO-204AL
• Manufacturer: Vishay

Specifications of 1N4007E-E3/54

• Repetitive Reverse Voltage Vrrm Max: 1kV
• Forward Current If(av): 1A
• Forward Voltage Vf Max: 1.1V
• Forward Surge Current Ifsm Max: 30A
• Diode Type: Standard Recovery
• Voltage - Forward (vf) (max) @ If: 1.1V @ 1A
• Voltage - Dc Reverse (vr) (max): 1000V (1kV)
• Current - Average Rectified (io): 1A
• Current - Reverse Leakage @ Vr: 5µA @ 1000V
• Speed: Standard Recovery >500ns, > 200mA (Io)
• Mounting Type: Through Hole
• Package / Case: DO-204AL, DO-41, Axial
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 1000 V
• Forward Voltage Drop: 1.1 V
• Forward Continuous Current: 1 A
• Max Surge Current: 45 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 50 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Reverse Recovery Time (trr): -
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Document Number: 88503
Revision: 23-Feb-11
1000
0.01
0.01
100
100
Fig. 4 - Typical Instantaneous Forward Characteristics
0.1
0.1
50
45
40
35
30
25
20
15
10
10
10
Fig. 3 - Non-Repetitive Peak Forward Surge Current
1
1
0.6
25
0
Pulse Width = 300 μs
Fig. 5 - Typical Reverse Characteristics
Square Waveform
Percentage of Peak Reverse Voltage (%)
1 % Duty Cycle
0.8
Instantaneous Forward Voltage (V)
T
20
t
J
p
= 25 °C
50
Ambient Temperature (°C)
1.0
T
T
T
J
J
J
40
= 150 °C
= 100 °C
= 25 °C
[e-mail], [e-mail],
t
t
t
For technical questions within your region, please contact one of the following:
p
p
p
1.2
75
= 1 ms
= 2 ms
= 5 ms
60
1.4
100
80
1.6
125
100
1.8
100
100
0.1
10
10
1
1
0.01
0.1
[e-mail]
Fig. 7 - Typical Transient Thermal Impedance
Vishay General Semiconductor
Fig. 6 - Typical Junction Capacitance
0.1
1N4001 thru 1N4007
t - Pulse Duration (s)
Reverse Voltage (V)
1
1
10
V
sig
10
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
www.vishay.com
p-p
100
100
3