DSI 30-12A IXYS SEMICONDUCTOR, DSI 30-12A Datasheet - Page 2

• Manufacturer Part Number: DSI 30-12A
• Description: DIODE, STANDARD, 30A, 1200V
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of DSI 30-12A

• Repetitive Reverse Voltage Vrrm Max: 1.2kV
• Forward Current If(av): 30A
• Forward Voltage Vf Max: 1.45V
• Forward Surge Current Ifsm Max: 300A
• Operating Temperature Range: -40°C To
• Diode Type: Standard Recovery
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Fig. 1 Forward current versus voltage
Fig. 4 Power dissipation versus direct output current and ambient temperature, sine 180°
Fig. 6 Transient thermal impedance junction to case
© 2000 IXYS All rights reserved
Z
I
P
F
thJC
tot
K/W
1.2
1.0
0.8
0.6
0.4
0.2
0.0
50
40
30
20
10
60
40
20
W
A
0.001
0
0
0.0
0
drop per diode
0.4
T
T
VJ
VJ
10
=150°C
= 25°C
0.8
0.01
V
F
20
1.2
V
I
d(AV)M
1.6
30
A
I
0.1
FSM
Fig. 2 Surge overload current
250
200
150
100
0
A
50
0.001
0
50Hz, 80% V
20
40
0.01
60
RRM
1
80 100 120 140
T
VJ
T
= 150°C
VJ
T
amb
= 45°C
0.1
t
t
s
R
1 K/W
2 K/W
3 K/W
5 K/W
7 K/W
10 K/W
15 K/W
s
thHA
:
DSI30
°C
1
10
I
Fig. 3 I
Fig. 5 Max. forward current versus
F(AV)M
Constants for Z
I
2
t
1
2
3
4
5
A
10
10
i
35
30
25
20
15
10
2
A
5
0
s
3
2
1
0
V
case temperature
2
R
t versus time per diode
20 40 60 80 100 120 140
= 0 V
T
R
0.01362
0.1962
0.267
0.3052
0.218
VJ
thi
= 45°C
2
(K/W)
thJC
calculation:
3
T
4 5 6 7 8 9
VJ
T
= 150°C
t
0.0001
0.00316
0.023
0.4
0.15
DSI 30
i
C
(s)
t
ms
2 - 2
°C
10