EGP20D-E3/54 Vishay, EGP20D-E3/54 Datasheet - Page 3

• Manufacturer Part Number: EGP20D-E3/54
• Description: FAST DIODE, 2A, 200V, DO-204AC
• Manufacturer: Vishay

Specifications of EGP20D-E3/54

• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 950mV
• Reverse Recovery Time Trr Max: 50ns
• Forward Surge Current Ifsm Max: 75A
• Diode Type: Fast Recovery
• Voltage - Forward (vf) (max) @ If: 950mV @ 2A
• Voltage - Dc Reverse (vr) (max): 200V
• Current - Average Rectified (io): 2A
• Current - Reverse Leakage @ Vr: 5µA @ 200V
• Speed: Fast Recovery =< 500ns, > 200mA (Io)
• Reverse Recovery Time (trr): 50ns
• Mounting Type: Through Hole
• Package / Case: DO-204AC, DO-15, Axial
• Product: Ultra Fast Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 200 V
• Forward Voltage Drop: 0.95 V
• Recovery Time: 50 ns
• Forward Continuous Current: 2 A @ Ta=55C
• Max Surge Current: 75 A
• Reverse Current Ir: 5 uA
• Mounting Style: Through Hole
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Capacitance @ Vr, F: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Document Number: 88583
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.01
0.01
0.01
100
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
0.1
0.1
0.1
10
10
10
1
1
1
0.2
Fig. 4 - Typical Reverse Leakage Characteristics
0.2
0
EGP20A thru EGP20D
EGP20F and EGP20G
EGP20A thru EGP20D
T
T
J
0.4
J
= 125 °C
Percent of Peak Reverse Voltage (%)
= 125 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Voltage (V)
0.4
20
T
J
0.6
= 150 °C
T
J
= 150 °C
0.8
0.6
40
[e-mail], [e-mail],
T
T
T
T
J
For technical questions within your region, please contact one of the following:
J
J
J
1.0
= 25 °C
= 150 °C
= 125 °C
= 100 °C
T
T
0.8
60
J
J
1.2
= 25 °C
= 100 °C
T
J
T
= 25 °C
J
1.4
= 100 °C
1.0
80
This datasheet is subject to change without notice.
1.6
100
1.8
1.2
0.001
0.01
140
120
100
100
100
0.1
10
0.1
10
80
60
40
20
0
1
1
0.01
Fig. 6 - Typical Reverse Leakage Characteristics
0.1
0
[e-mail]
Fig. 8 - Typical Transient Thermal Impedance
EGP20F and EGP20G
Vishay General Semiconductor
Fig. 7 - Typical Junction Capacitance
Percent of Peak Reverse Voltage (%)
EGP20A thru EGP20D
EGP20F and EGP20G
20
EGP20A thru EGP20G
0.1
1
t - Pulse Duration (s)
Reverse Voltage (V)
T
T
T
J
J
J
40
= 150 °C
= 125 °C
= 100 °C
10
1
T
J
60
= 25 °C
www.vishay.com/doc?91000
T
f = 1.0 MHz
V
100
J
sig
10
= 25 °C
= 50 mV
80
www.vishay.com
p-p
1000
100
100
3