EGP20D-E3/54 Vishay, EGP20D-E3/54 Datasheet - Page 3
![FAST DIODE, 2A, 200V, DO-204AC](/photos/5/38/53862/sa_axial_series_sml.jpg)
EGP20D-E3/54
Manufacturer Part Number
EGP20D-E3/54
Description
FAST DIODE, 2A, 200V, DO-204AC
Manufacturer
Vishay
Specifications of EGP20D-E3/54
Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
2A
Forward Voltage Vf Max
950mV
Reverse Recovery Time Trr Max
50ns
Forward Surge Current Ifsm Max
75A
Diode Type
Fast Recovery
Voltage - Forward (vf) (max) @ If
950mV @ 2A
Voltage - Dc Reverse (vr) (max)
200V
Current - Average Rectified (io)
2A
Current - Reverse Leakage @ Vr
5µA @ 200V
Speed
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr)
50ns
Mounting Type
Through Hole
Package / Case
DO-204AC, DO-15, Axial
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
0.95 V
Recovery Time
50 ns
Forward Continuous Current
2 A @ Ta=55C
Max Surge Current
75 A
Reverse Current Ir
5 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Capacitance @ Vr, F
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EGP20D-E3/54
Manufacturer:
Vishay Semiconductors
Quantity:
3 253
Document Number: 88583
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.001
0.01
0.01
0.01
100
100
100
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 5 - Typical Instantaneous Forward Characteristics
0.1
0.1
0.1
10
10
10
1
1
1
0.2
Fig. 4 - Typical Reverse Leakage Characteristics
0.2
0
EGP20A thru EGP20D
EGP20F and EGP20G
EGP20A thru EGP20D
T
T
J
0.4
J
= 125 °C
Percent of Peak Reverse Voltage (%)
= 125 °C
Instantaneous Forward Voltage (V)
Instantaneous Forward Voltage (V)
0.4
20
T
J
0.6
= 150 °C
T
J
= 150 °C
0.8
0.6
40
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
T
T
T
T
J
For technical questions within your region, please contact one of the following:
J
J
J
1.0
= 25 °C
= 150 °C
= 125 °C
= 100 °C
T
T
0.8
60
J
J
1.2
= 25 °C
= 100 °C
T
J
T
= 25 °C
J
1.4
= 100 °C
1.0
80
This datasheet is subject to change without notice.
1.6
100
1.8
1.2
0.001
0.01
140
120
100
100
100
0.1
10
0.1
10
80
60
40
20
0
1
1
0.01
Fig. 6 - Typical Reverse Leakage Characteristics
0.1
0
DiodesEurope@vishay.com
Fig. 8 - Typical Transient Thermal Impedance
EGP20F and EGP20G
Vishay General Semiconductor
Fig. 7 - Typical Junction Capacitance
Percent of Peak Reverse Voltage (%)
EGP20A thru EGP20D
EGP20F and EGP20G
20
EGP20A thru EGP20G
0.1
1
t - Pulse Duration (s)
Reverse Voltage (V)
T
T
T
J
J
J
40
= 150 °C
= 125 °C
= 100 °C
10
1
T
J
60
= 25 °C
www.vishay.com/doc?91000
T
f = 1.0 MHz
V
100
J
sig
10
= 25 °C
= 50 mV
80
www.vishay.com
p-p
1000
100
100
3