BYW55-TAP Vishay, BYW55-TAP Datasheet - Page 2

• Manufacturer Part Number: BYW55-TAP
• Description: AVALANCHE DIODE, 2A, 800V, SOD-57
• Manufacturer: Vishay

Specifications of BYW55-TAP

• Repetitive Reverse Voltage Vrrm Max: 800V
• Forward Current If(av): 2A
• Forward Voltage Vf Max: 1V
• Reverse Recovery Time Trr Max: 4µs
• Forward Surge Current Ifsm Max: 50A
• Diode Type: Fast Recovery
• Product: Standard Recovery Rectifier
• Configuration: Single
• Reverse Voltage: 800 V
• Forward Voltage Drop: 1 V at 1 A
• Recovery Time: 4000 ns
• Forward Continuous Current: 2 A
• Max Surge Current: 50 A
• Reverse Current Ir: 1 uA
• Mounting Style: SMD/SMT
• Package / Case: SOD-57
• Maximum Operating Temperature: + 175 C
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

TYPICAL CHARACTERISTICS (T
Document Number: 86049
Rev. 1.7, 25-Aug-10
ELECTRICAL CHARACTERISTICS (T
PARAMETER
Forward voltage
Reverse current
Breakdown voltage
Diode capacitance
Reverse recovery time
Reverse recovery charge
16350
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
0.001
Fig. 2 - Forward Current vs. Forward Voltage
0.01
120
100
949101
0.1
10
80
60
40
20
0
1
0.0
0
T
5
l
L
0.4
= constant
V
F
T
l - Lead Length (mm)
j
- Forward Voltage (V)
= 175 °C
10
[e-mail], [e-mail],
l
For technical questions within your region, please contact one of the following:
0.8
15
T
j
= 25 °C
I
R
1.2
20
I
F
= 100 μA, t
I
F
= 1 A, dI/dt = 5 A/μs, V
= 0.5 A, I
amb
V
l
F
Standard Avalanche Sinterglass
25
R
V
TEST CONDITION
= 1 A, dI/dt = 5 A/μs
1.6
R
= V
= 25 °C, unless otherwise specified)
= 4 V, f = 1 MHz
V
RRM
p
amb
30
R
I
R
/T = 0.01, t
F
BYW52, BYW53, BYW54, BYW55, BYW56
= 1 A, i
= V
= 1 A
, T
= 25 °C, unless otherwise specified)
RRM
j
= 100 °C
R
= 0.25 A
p
R
Diode
= 0.3 ms
= 50 V
SYMBOL
V
Q
C
V
I
I
(BR)
t
t
16351
16352
Fig. 4 - Reverse Current vs. Junction Temperature
R
R
rr
rr
F
D
rr
1000
[e-mail]
100
2.5
2.0
1.5
1.0
0.5
0.0
10
Fig. 3 - Max. Average Forward Current vs.
1
25
0
V
20
R
MIN.
T
= V
amb
50
T
-
-
-
-
-
-
-
-
PCB: d = 25 mm
R
j
Ambient Temperature
40
RRM
- Junction Temperature (°C)
thJA
- Ambient Temperature (°C)
Vishay Semiconductors
= 100 K/W
60
75
80 100 120 140 160 180
TYP.
0.9
0.1
100
18
5
-
-
-
-
R
125
half sine wave
thJA
l = 10 mm
V
R
= 45 K/W
= V
MAX
1600
200
150
10
RRM
1
1
4
4
-
www.vishay.com
175
UNIT
μA
μA
pF
nC
μs
μs
V
V
159