1N5624-TR Vishay, 1N5624-TR Datasheet - Page 3

AVALANCHE DIODE, 3A, 200V, SOD-64

1N5624-TR

Manufacturer Part Number
1N5624-TR
Description
AVALANCHE DIODE, 3A, 200V, SOD-64
Manufacturer
Vishay
Datasheets

Specifications of 1N5624-TR

Repetitive Reverse Voltage Vrrm Max
200V
Forward Current If(av)
3A
Forward Voltage Vf Max
1V
Reverse Recovery Time Trr Max
6µs
Forward Surge Current Ifsm Max
100A
Diode Type
Standard Recovery
Product
Ultra Fast Recovery Rectifier
Configuration
Single
Reverse Voltage
200 V
Forward Voltage Drop
1 V
Recovery Time
3 us
Forward Continuous Current
3 A
Max Surge Current
125 A
Reverse Current Ir
1 uA
Mounting Style
Through Hole
Maximum Operating Temperature
+ 175 C
Minimum Operating Temperature
- 55 C
Package / Case
DO-201AD
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Document Number: 88524
Revision: 15-Mar-11
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
0.01
100
Fig. 3 - Typical Instantaneous Forward Characteristics
0.1
0.1
10
10
1
1
0.6
0
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Typical Reverse Characteristics
0.7
Instantaneous Forward Voltage (V)
20
0.8
40
0.9
DiodesAmericas@vishay.com, DiodesAsia@vishay.com,
For technical questions within your region, please contact one of the following:
Pulse Width = 300 μs
T
T
1.0
T
J
J
J
60
1 % Duty Cycle
= 125 °C
= 75 °C
= 25 °C
T
J
= 25 °C
1.1
80
This datasheet is subject to change without notice.
1.2
100
0.210 (5.3)
0.190 (4.8)
1.3
0.052 (1.32)
0.048 (1.22)
DIA.
DIA.
DO-201AD
0.375 (9.5)
0.285 (7.2)
1.0 (25.4)
1.0 (25.4)
100
MIN.
MIN.
10
1
DiodesEurope@vishay.com
1N5624GP thru 1N5627GP
Vishay General Semiconductor
Fig. 5 - Typical Junction Capacitance
Reverse Voltage (V)
10
www.vishay.com/doc?91000
V
sig
f = 1.0 MHz
T
J
= 50 mV
= 25 °C
www.vishay.com
p-p
100
3

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