VS-20CTH03PBF Vishay, VS-20CTH03PBF Datasheet - Page 5

• Manufacturer Part Number: VS-20CTH03PBF
• Description: N & P CHANNEL MOSFET, 20V, SC-70
• Manufacturer: Vishay

Specifications of VS-20CTH03PBF

• Repetitive Reverse Voltage Vrrm Max: 300V
• Forward Current If(av): 20A
• Forward Voltage Vf Max: 1.25V
• Diode Configuration: Dual Common Cathode
• Diode Type: Fast Recovery
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Document Number: 94010
Revision: 11-Sep-08
100
10
Fig. 9 - Typical Reverse Recovery Time vs. dI
100
V
R
= 200 V
T
J
= 25 °C
dI
(1) dI
(2) I
(3) t
0
F
/dt (A/µs)
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
through zero crossing
RRM
rr
I
F
F
- reverse recovery time measured
/dt - rate of change of current
T
- peak reverse recovery current
J
F
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= 125 °C
to point where a line passing
Fig. 12 - Reverse Recovery Waveform and Definitions
Fig. 11 - Reverse Recovery Parameter Test Circuit
RRM
I
F
= 10 A
and 0.50 I
(1)
adjust
dI
2 x 10 A FRED Pt
F
Hyperfast Rectifier,
/dt
dI
1000
F
F
/dt
RRM
/dt
L = 70 µH
G
t
a
(2)
V
(3)
R
= 200 V
I
RRM
t
0.01 Ω
D
rr
S
(4) Q
(5) dI
IRFP250
and I
current during t
20CTH03PbF/20CTH03FPPbF
rr
(rec)M
0.75 I
- area under curve defined by t
TM
RRM
t
D.U.T.
b
/dt - peak rate of change of
RRM
1000
100
dI
10
0.5 I
Q
(rec)M
100
rr
Q
=
RRM
b
Vishay High Power Products
rr
/dt
Fig. 10 - Typical Stored Charge vs. dI
portion of t
t
(4)
rr
x I
(5)
2
RRM
rr
T
J
T
= 25 °C
J
dI
= 125 °C
rr
F
/dt (A/µs)
V
I
F
R
= 10 A
= 200 V
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F
/dt
1000
5