DSP 45-12A IXYS SEMICONDUCTOR, DSP 45-12A Datasheet - Page 4

DIODE, STANDARD, 2X45A, 1200V

DSP 45-12A

Manufacturer Part Number
DSP 45-12A
Description
DIODE, STANDARD, 2X45A, 1200V
Manufacturer
IXYS SEMICONDUCTOR
Datasheet

Specifications of DSP 45-12A

Repetitive Reverse Voltage Vrrm Max
1.2kV
Forward Current If(av)
45A
Forward Voltage Vf Max
1.23V
Forward Surge Current Ifsm Max
480A
Diode Configuration
Dual Bridge
Diode Type
Standard Recovery
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
IXYS reserves the right to change limits, conditions and dimensions.
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[K/W]
P
[W]
[A]
I
Z
F
tot
th
180
160
140
120
100
80
70
60
50
40
30
20
10
80
60
40
20
0.6
0.4
0.2
0.0
0
0
0.001
0.0
0
Fig. 1 Forward current versus
Fig. 4 Power dissipation vs. direct output current & ambient temperature, sine 180°
Fig. 6 Transient thermal impedance junction to case
T
T
VJ
VJ
= 25°C
= 150°C
10
voltage drop per diode
0.5
20
V
F
1.0
[V]
0.01
I
dAVM
30
1.5
[A]
40
2.0
50
I
[A]
FSM
t [s]
0.1
300
200
100
0
0.001
0
Fig. 2 Surge overload current
50 Hz, 80% V
40
T
Data according to IEC 60747and per diode unless otherwise specified
VJ
0.01
= 150°C
80
RRM
T
t [s]
1
amb
[°C]
120
0.1
T
VJ
R
0.5 KW
1.8 KW
3
5
8
15 KW
= 45°C
thJA
160
:
KW
KW
KW
1
10
[A
I
dAVM
[A]
I
2
2
t
s]
10
10
10
80
60
40
20
0
4
3
2
Fig. 5 Max. forward current versus
1
0
Fig. 3 I
1
2
3
4
V
i
R
= 0 V
0.033
0.095
0.164
0.258
40
T
R
case temperature, sine180°
VJ
2
i
t versus time per diode
= 45°C
2
DSP45-12A
80
T
0.0006
0.0039
0.033
0.272
C
t [ms]
3
[°C]
T
τ
VJ
i
120
4 5 6 7 8 9 0
= 150°C
160
20090528a
200
1

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