DSEI2X121-02A IXYS SEMICONDUCTOR, DSEI2X121-02A Datasheet - Page 2

• Manufacturer Part Number: DSEI2X121-02A
• Description: FAST RECTIFIER, DUAL, 123A SOT-227B
• Manufacturer: IXYS SEMICONDUCTOR

Specifications of DSEI2X121-02A

• Repetitive Reverse Voltage Vrrm Max: 200V
• Forward Current If(av): 123A
• Forward Voltage Vf Max: 1.1V
• Diode Configuration: Dual Independent
• Diode Type: Fast Recovery
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
Fig. 1 Forward current I
Fig. 4 Dynamic parameters Q
Fig. 7 Transient thermal impedance junction to case at various duty cycles
Z
I
0.001
F
K
thJC
0.01
K/W
200
175
150
125
100
f
2.0
1.5
1.0
0.5
0.0
0.1
A
75
50
25
0.001
0
1
0.0
0
0.02
0.1
0.05
versus T
0.01
0.2
D=0.5
Single Pulse
T
T
VJ
VJ
=100°C
=150°C
0.5
50
VJ
0.01
F
100
T
1.0
versus V
VJ
V
Q
T
F
VJ
r
=25°C
r
V
, I
°C
I
RM
RM
F
150
1.5
0.1
t
Q
rr
Fig. 2 Typ. reverse recovery charge Q
Fig. 5 Typ. recovery time t
r
150
125
100
ns
2.0
1.5
1.0
0.5
0.0
75
50
C
10
0
T
V
versus -di
versus -di
VJ
R
= 100°C
= 100V
200
I
I
I
F
F
F
=240A
=120A
= 60A
400
1
F
F
/dt
/dt
s
100
-di
600
F
-di
/dt
T
V
VJ
R
t
F
I
I
I
/dt
= 100°C
= 100V
F
F
F
=240A
=120A
= 60A
rr
800
A/
m
s
A/
1000
m
10
s
r
I
V
RM
FR
Fig. 3 Typ. peak reverse current I
Fig. 6 Typ. peak forward voltage
Constants for Z
60
50
40
30
20
10
12
10
V
A
0
8
6
4
2
0
1
2
3
i
0
0
T
V
I
I
I
t
T
I
F
F
F
fr
F
VJ
R
=240A
=120A
= 60A
VJ
versus -di
V
100 200 300 400 500
= 100°C
= 100V
= 100°C
= 120A
DSEI 2x 121, 200V
200
FR
and t
R
0.0725
0.1423
0.2852
thi
400
thJC
(K/W)
fr
F
versus di
/dt
calculation:
600
di
-di
F
/dt
F
V
/dt
A/
FR
800
F
/dt
t
0.028
0.092
0.35
i
m
(s)
s
1000
A/
RM
m
3.0
2.5
2.0
1.5
1.0
0.5
0.0
2 - 2
s
s
t
fr