GSOT12C-GS18 Vishay, GSOT12C-GS18 Datasheet - Page 9

• Manufacturer Part Number: GSOT12C-GS18
• Description: TVS DIODE ARRAY, 504W, 12V, SOT-23
• Manufacturer: Vishay

Specifications of GSOT12C-GS18

• Reverse Stand-off Voltage Vrwm: 12V
• Breakdown Voltage Range: 15V
• Clamping Voltage Vc Max: 26V
• Diode Configuration: Bidirectional
• Peak Pulse Current Ippm: 12A
• Diode Case Style: SOT-23
• No. Of Pins: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Note
• Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 to 2 or pin 2 to 1; pin 3 not connected)
Document Number: 85824
Rev. 2.0, 22-Jul-10
ELECTRICAL CHARACTERISTICS GSOT08C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS GSOT12C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS GSOT15C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS GSOT24C
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
Number of lines which can be protected
Number of lines which can be protected
Number of lines which can be protected
Number of lines which can be protected
For technical questions, contact:
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
Two-Line ESD-Protection in SOT-23
at V
at V
at V
at V
at V
at V
at V
at V
at I
at I
at I
at I
R
R
R
R
R
at V
R
at V
R
at V
R
PP
PP
at V
= 7.5 V; f = 1 MHz
= 7.5 V; f = 1 MHz
at I
at I
at I
at I
PP
PP
= 12 V; f = 1 MHz
at I
at I
at I
at I
at I
at I
at I
at I
= 0 V; f = 1 MHz
= 4 V; f = 1 MHz
= 0 V; f = 1 MHz
= 0 V; f = 1 MHz
= 0 V; f = 1 MHz
= I
= I
R
R
= I
R
= I
R
R
R
R
R
R
PP
R
PP
R
PP
R
PP
= 12.5 V
= 15.5 V
= 24.5 V
= 1 mA
PPM
= 1 mA
PPM
= 1 mA
= 1 mA
= 5 μA
= 1 μA
= 1 μA
= 1 μA
= 8.5 V
PPM
PPM
= 1 A
= 1 A
= 1 A
= 1 A
= 18 A
= 12 A
= 8 A
= 5 A
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SYMBOL
SYMBOL
SYMBOL
SYMBOL
N
N
N
N
V
V
V
V
channel
channel
channel
channel
V
V
V
V
RWM
V
C
RWM
V
C
RWM
V
C
RWM
V
C
I
I
I
I
BR
BR
BR
BR
R
R
R
R
C
D
C
D
C
D
C
D
GSOT03C to GSOT36C
MIN.
MIN.
MIN.
MIN.
12.5
13.5
15.5
24.5
27.5
8.5
9.5
17
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vishay Semiconductors
TYP.
TYP.
TYP.
TYP.
10.7
11.7
18.5
15.7
16.4
23.4
18.7
20.4
26.6
30.7
80
60
58
36
45
25
34
40
33
18
-
-
-
-
-
-
-
-
-
-
-
-
MAX.
MAX.
MAX.
MAX.
22.2
19.7
28.1
24.5
30.6
125
14
75
60
41
48
40
1
5
1
1
1
1
1
1
-
-
-
-
-
-
-
-
-
-
-
-
www.vishay.com
UNIT
UNIT
UNIT
UNIT
lines
lines
lines
lines
μA
μA
μA
μA
pF
pF
pF
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
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