VESD05A1B-02V-GS08 Vishay, VESD05A1B-02V-GS08 Datasheet - Page 2

• Manufacturer Part Number: VESD05A1B-02V-GS08
• Description: DIODE, TVS, 5V, SOD523
• Manufacturer: Vishay
• Series: VESD05A1B-02Vr

Specifications of VESD05A1B-02V-GS08

• Reverse Stand-off Voltage Vrwm: 5V
• Breakdown Voltage Range: 6V To 7.5V
• Clamping Voltage Vc Max: 11V
• Diode Configuration: Bidirectional
• Peak Pulse Current Ippm: 3A
• Diode Case Style: SOD-523
• No. Of Pins: 2
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6V
• Power (watts): 33W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOD-523
• Polarity: Bidirectional
• Channels: 1 Channel
• Clamping Voltage: 11 V
• Operating Voltage: 5 V (Min)
• Breakdown Voltage: 6.8 V
• Termination Style: SMD/SMT
• Peak Surge Current: 3 A
• Peak Pulse Power Dissipation: 33 W
• Capacitance: 12 pF
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Dimensions: 0.9 mm W x 1.3 mm L x 0.7 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1407-2; VESD05A1B-02V-GS08GITR; VESD05A1B-02V-GS08GITR

VESD05A1B-02V
Vishay Semiconductors
BiAs-MODE (bidirectional asymmetrical protection mode)
With the VESD05A1B-02V one signal- or data-lines (L1) can be protected against voltage transients. With pin 1 connected to
ground and pin 2 connected to a signal- or data-line which has to be protected. As long as the voltage level on the data- or
signal-line is between 0 V (ground level) and the specified maximum reverse working voltage (V
between data line and ground offers a high isolation to the ground line. The protection device behaves like an open switch.
As soon as any positive transient voltage signal exceeds the break through voltage level of the protection diode, the diode
becomes conductive and shorts the transient current to ground. Now the protection device behaves like a closed switch. The
clamping voltage (V
(resistance and inductance) of the protection device.
Any negative transient signal will be clamped accordingly. The negative transient current is flowing in the forward direction of the
protection diode. The low forward voltage (V
Due to the different clamping levels in forward and reverse direction the VESD05A1B-02V clamping behaviour is bidirectional
and asymmetrical (BiAs).
Note
•
TYPICAL CHARACTERISTICS (T
www.vishay.com
2
ELECTRICAL CHARACTERISTICS VESD05A1B-02V
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Forward clamping voltage
Capacitance
Ratings at 25 °C, ambient temperature unless otherwise specified. BiAs mode (between pin 1 and pin 2).
Fig. 1 - ESD Discharge Current Wave Form
20557
120 %
100 %
80 %
60 %
40 %
20 %
acc. IEC 61000-4-2 (330 Ω/150 pF)
53 %
27 %
0 %
- 10 0 10 20 30 40 50 60 70 80 90 100
C
) is defined by the breakthrough voltage (V
Rise time = 0.7 ns to 1 ns
L1
Time (ns)
Ground
Number of lines which can be protected
TEST CONDITIONS/REMARKS
For technical questions, contact:
at V
ESD-Protection Diode in SOD-523
at V
at I
at I
amb
R
R
F
at I
PP
PP
at I
= 2.5 V; f = 1 MHz
at I
) clamps the negative transient close to the ground level.
at V
at I
at I
= 0 V; f = 1 MHz
PP
= 25 °C, unless otherwise specified)
R
= I
= I
R
PP
PP
R
= 1 mA
= 1 µA
= 0.2 A
PPM
PPM
= 5 V
= 1 A
= 1 A
= 3 A
= 3 A
[e-mail]
BR
) level plus the voltage drop at the series impedance
SYMBOL
N
V
channel
V
C
RWM
V
V
I
BR
R
Fig. 2 - 8/20 µs Peak Pulse Current Wave Form
C
F
D
20548
100 %
80 %
60 %
40 %
20 %
0 %
0
MIN.
5
6
-
-
-
-
-
-
-
-
-
acc. IEC 61000-4-5
10
BiAs
20280
Time (µs)
TYP.
0.01
0.95
6.8
8.9
1.3
1.9
8 µs to 100 %
19
12
8
-
-
20
RWM
Document Number: 81249
20 µs to 50 %
) the protection diode
MAX.
30
0.1
7.5
9.5
1.2
11
23
1
Rev. 1.3, 29-Apr-10
-
-
-
-
40
UNIT
lines
µA
pF
pF
V
V
V
V
V
V
V