VESD03-02V-GS08 Vishay, VESD03-02V-GS08 Datasheet - Page 3

• Manufacturer Part Number: VESD03-02V-GS08
• Description: DIODE, TVS, 3V, SOD523
• Manufacturer: Vishay
• Series: VESDxx-02Vr

Specifications of VESD03-02V-GS08

• Reverse Stand-off Voltage Vrwm: 3V
• Breakdown Voltage Range: 4V
• Clamping Voltage Vc Max: 12V
• Peak Pulse Current Ippm: 9A
• Diode Case Style: SOD-523
• No. Of Pins: 2
• Svhc: No SVHC (18-Jun-2010)
• Breakdown: RoHS Compliant
• Voltage - Reverse Standoff (typ): 3V
• Voltage - Breakdown: 4V
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: SOD-523
• Polarity: Unidirectional
• Channels: 1 Channel
• Clamping Voltage: 12 V
• Operating Voltage: 3 V
• Breakdown Voltage: 4 V
• Termination Style: SMD/SMT
• Peak Surge Current: 9 A
• Capacitance: 110 pF
• Maximum Operating Temperature: + 125 C
• Minimum Operating Temperature: - 40 C
• Dimensions: 0.9 mm W x 1.3 mm L x 0.7 mm H
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Power (watts): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 751-1406-2; VESD03-02V-GS08GITR; VESD03-02V-GS08GITR

Document Number: 83367
Rev. 1.0, 08-Nov-10
ELECTRICAL CHARACTERISTICS VESD01-02V
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS VESD03-02V
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS VESD05-02V
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS VESD08-02V
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
ELECTRICAL CHARACTERISTICS VESD12-02V
PARAMETER
Protection paths
Reverse working voltage
Reverse current
Reverse breakdown voltage
Reverse clamping voltage
Capacitance
Number of lines which can be protected
Number of lines which can be protected
Number of lines which can be protected
Number of lines which can be protected
Number of lines which can be protected
For technical questions, contact:
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
TEST CONDITIONS/REMARKS
at V
at V
at V
at V
at V
Single ESD-Protection Diode in
at I
at I
at I
at I
at I
R
R
R
R
R
at I
at I
at I
at I
at I
PP
= 0 V; f = 1 MHz
PP
= 0 V; f = 1 MHz
PP
= 0 V; f = 1 MHz
PP
= 0 V; f = 1 MHz
PP
= 0 V; f = 1 MHz
at I
at V
at I
at V
at I
at V
at I
at V
at I
at V
R
R
R
R
R
(see fig. 1)
(see fig. 1)
(see fig. 1)
(see fig. 1)
(see fig. 1)
= 1 mA
= 1 mA
= 1 mA
= 1 mA
= 1 mA
Rmax.
Rmax.
Rmax.
Rmax.
Rmax.
RWM
RWM
RWM
RWM
RWM
SOD-523
[e-mail]
SYMBOL
SYMBOL
SYMBOL
SYMBOL
SYMBOL
N
N
N
N
N
V
V
V
V
V
channel
channel
channel
channel
channel
V
V
V
V
V
RWM
V
C
RWM
V
C
RWM
V
C
RWM
V
C
RWM
V
C
I
I
I
I
I
R
BR
R
BR
R
BR
R
BR
R
BR
C
D
C
D
C
D
C
D
C
D
MIN.
MIN.
MIN.
MIN.
MIN.
1.5
6.5
12
14
1
3
4
5
8
9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Vishay Semiconductors
TYP.
TYP.
TYP.
TYP.
TYP.
180
110
12
20
55
30
35
25
30
9
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
VESDxx-02V
MAX.
MAX.
MAX.
MAX.
MAX.
100
0.1
0.1
0.1
20
1
1
1
1
1
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
www.vishay.com
UNIT
UNIT
UNIT
UNIT
UNIT
lines
lines
lines
lines
lines
µA
µA
µA
µA
µA
pF
pF
pF
pF
pF
V
V
V
V
V
V
V
V
V
V
V
V
V
V
V
3