SMF5V0A-GS08 Vishay, SMF5V0A-GS08 Datasheet - Page 2

• Manufacturer Part Number: SMF5V0A-GS08
• Description: TVS DIODE, 200W, 5V, DO219AB
• Manufacturer: Vishay

Specifications of SMF5V0A-GS08

• Reverse Stand-off Voltage Vrwm: 5V
• Breakdown Voltage Range: 6.4V
• Clamping Voltage Vc Max: 9.2V
• Peak Pulse Current Ippm: 21.7A
• Diode Case Style: DO-219AB
• No. Of Pins: 2
• Power Dissipation Pd: 200W
• Voltage - Reverse Standoff (typ): 5V
• Voltage - Breakdown: 6.4V
• Power (watts): 200W
• Polarization: Unidirectional
• Mounting Type: Surface Mount
• Package / Case: DO-219AB
• Polarity: Unidirectional
• Channels: 1 Channel
• Clamping Voltage: 9.2 V
• Operating Voltage: 5 V
• Breakdown Voltage: 6.1 V
• Termination Style: SMD/SMT
• Peak Surge Current: 21.7 A
• Peak Pulse Power Dissipation: 200 W
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 55 C
• Dimensions: 1.8 mm W x 2.8 mm L
• Operating Temperature Min Deg. C: -55C
• Operating Temperature Max Deg. C: 150C
• Pin Count: 2
• Rad Hardened: No
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 751-1426-2; SMF5V0A-GS08GITR; SMF5V0A-GS08GITR

SMF5V0A to SMF51A
Vishay Semiconductors
www.vishay.com
2
DEVICE NAME
PART NUMBER
PACKAGE DATA
SMF26A
SMF28A
SMF30A
SMF33A
SMF36A
SMF40A
SMF43A
SMF45A
SMF48A
SMF51A
ABSOLUTE MAXIMUM RATINGS (T
PARAMETER
Peak pulse current
Peak pulse power
Peak forward surge current
ESD immunity
Thermal resistance
Forward clamping voltage
Operating temperature
Storage temperature
ELECTRICAL CHARACTERISTICS (T
SMF5V0A
SMF6V0A
SMF6V5A
SMF7V0A
SMF7V5A
SMF8V0A
SMF8V5A
SMF9V0A
SMF10A
SMF11A
SMF12A
SMF13A
SMF14A
SMF15A
SMF16A
SMF17A
PACKAGE
BREAKDOWN
at I
NAME
REVERSE
VOLTAGE
V
SMF
T
, t
BR
6.40
6.67
7.22
7.78
8.33
8.89
9.44
11.1
12.2
13.3
14.4
15.6
16.7
17.8
18.9
(V)
10
p
MIN.
≤ 5 ms
TYPE CODE
Contact discharge acc. IEC 61000-4-2; 10 pulses
Mounted on epoxy glass PCB with 3 mm x 3 mm,
t
t
CG
CM
CR
CURRENT
CE
CK
CP
CT
CV
CX
CZ
p
p
Air discharge acc. IEC 61000-4-2; 10 pulses
t
= 10/1000 µs waveform acc. IEC 61000-4-5
= 10/1000 µs waveform acc. IEC 61000-4-5
For technical questions, contact:
p
TEST
(mA)
= 8/20 µs waveform acc. IEC 61000-4-5
10
10
10
10
I
1
1
1
1
1
1
1
1
1
1
1
1
T
8.3 ms single half sine-wave
Surface Mount ESD Protection
Cu pads ( ≥ 40 µm thick)
WEIGHT
Junction temperature
TEST CONDITIONS
15 mg
WORKING
REVERSE
VOLTAGE
V
amb
(V)
6.5
7.5
8.5
RWM
10
11
12
13
14
15
16
17
amb
5
6
7
8
9
I
F
= 12 A
= 25 °C, unless otherwise specified)
= 25 °C, unless otherwise specified)
FLAMMABILITY
REVERSE
CURRENT
Diodes
COMPOUND
at V
MOLDING
UL 94 V-0
RATING
(µA)
400
400
250
100
2.5
2.5
2.5
50
25
10
I
5
1
1
1
1
1
RWM
R
[e-mail]
t
PEAK PULSE
p
MAXIMUM
CURRENT
= 10/1000 s
21.7
19.4
17.9
16.7
15.5
14.7
13.9
13.5
11.8
10.1
I
MOISTURE SENSITIVITY
PPM
(A)
9.3
8.6
8.2
7.7
7.2
11
(according J-STD-020)
MSL level 1
SYMBOL
LEVEL
V
R
T
I
I
P
PPM
FSM
V
T
CLAMPING
ESD
STG
thJA
REVERSE
VOLTAGE
PP
F
J
at I
10.3
11.2
12.9
13.6
14.4
15.4
18.2
19.9
21.5
23.2
24.4
27.6
9.2
V
(V)
12
17
26
PPM
C
Characteristics”
see “Electrical
- 55 to + 150
- 55 to + 150
CAPACITANCE
at V
VALUE
f = 1 MHz
1000
± 30
± 30
C
SOLDERING CONDITIONS
200
180
3.5
20
D
1030
1010
(pF)
260 °C/10 s at terminals
750
670
620
R
850
730
660
570
460
440
420
370
350
340
310
Document Number: 85811
TYP.
= 0 V,
Rev. 2.5, 22-Sep-10
PROTECTION
N
PATHS
UNIT
K/W
channel
kV
kV
°C
°C
W
W
A
A
V
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1