SEP8706-001 Honeywell Sensing and Control, SEP8706-001 Datasheet - Page 3
![DIODE IR EMITTING AIGAAS SIDELK](/photos/7/99/79936/sep8706-00_2_3___sep8506-00_1_2_3___sdp8406-00_2_3__sml.jpg)
SEP8706-001
Manufacturer Part Number
SEP8706-001
Description
DIODE IR EMITTING AIGAAS SIDELK
Manufacturer
Honeywell Sensing and Control
Specifications of SEP8706-001
Peak Wavelength
880nm
Forward Current If(av)
50mA
Rise Time
700ns
Fall Time Tf
700ns
Supply Voltage Range
1.7V
Operating Temperature Range
-40°C To +85°C
Viewing Angle
50°
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
480-3580
SEP8706-001
SEP8706-001
Fig. 1
Fig. 3
Fig. 5
SEP8706
AlGaAs Infrared Emitting Diode
54
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
1.6
1.5
1.4
1.3
1.2
1.1
1.0
Radiant Intensity vs
Angular Displacement
Forward Voltage vs
Forward Current
Spectral Bandwidth
760
-60
0
-45
Angular displacement - degrees
800
10
-30
Forward current - mA
Wavelength - nm
840
-15
20
880
0
+15 +30 +45 +60
30
920
960
40
gra_030.ds4
gra_201.ds4
gra_011.ds4
1000
50
Fig. 2
Fig. 4
Fig. 6
10.0
1.60
1.55
1.50
1.45
1.40
1.35
1.30
1.25
1.20
5.0
2.0
1.0
0.5
0.2
0.1
1.0
0.6
0.4
0.2
0.1
10
Radiant Intensity vs
Forward Current
Forward Voltage vs
Temperature
Coupling Characteristics
with SDP8406
6
4
2
0.01
10
-40
Lens-to-lens separation - inches
0.02
-15
I
T
F
A
= 20 mA
Forward current - mA
= 25 °C
Temperature - °C
0.05
Honeywell reserves the right to make
changes in order to improve design and
supply the best products possible.
20
10
I
T
0.1
F
V
A
= 20 mA
CE
= 25 °C
30
35
= 5V
0.2
40 50
60
0.5
gra_028.ds4
gra_208.ds4
gra_031.ds4
100
1.0
85